Nanoscale patterning using self-assembled polymers for semiconductor applications

Guarini, K.W.; Black, Charles T.; Milkove, K. R.; Sandstrom, R. L.

doi:10.1116/1.1421551

Cited by 175 publications

(145 citation statements)

References 15 publications

Supporting

Mentioning

139

Contrasting

Order By: Relevance

“…Cylindrical nanodomains have greater aspect ratio features, and have been used to produce dynamic access memory stack capacitors [6][7][8]. In processing these devices, however, Guarini and coworkers showed that the polymer films must be sufficiently thin (<45 nm) to demonstrate a high degree of pore-size uniformity.…”

Section: Nanolithographymentioning

confidence: 99%

Patterning with block copolymer thin films

Segalman

2005

Materials Science and Engineering: R: Reports

933

921

View full text Add to dashboard Cite

The nanometer-scale architectures in thin films of self-assembling block copolymers have inspired a variety of new applications. For example, the uniformly sized and shaped nanodomains formed in the films have been used for nanolithography, nanoparticle synthesis, and high-density information storage media. Imperative to all of these applications, however, is a high degree of control over orientation of the nanodomains relative to the surface of the film as well as control over order in the plane of the film. Induced fields including electric, shear, and surface fields have been demonstrated to influence orientation. Both heteroepitaxy and graphoepitaxy can induce positional order on the nanodomains in the plane of the film. This article will briefly review a variety of mechanisms for gaining control over block copolymer order as well as many of the applications of these materials. Particular attention is paid to the potential of perfecting long-range two-dimensional order over a broader range of length scales and the extension of these concepts to functional materials and more complex architectures. #

show abstract

Section: Nanolithographymentioning

confidence: 99%

Patterning with block copolymer thin films

Segalman

2005

Materials Science and Engineering: R: Reports

933

921

View full text Add to dashboard Cite

show abstract

“…First real-world applications of such nanoscale patterning are beginning to be reported; for example, for use in flash memory devices and metal oxide semiconductor (MOS) capacitors. [8][9][10][11] For many potential applications the dimensions of the nanostructures need to be optimized experimentally. Tools to continuously vary the dimensions of the nanopatterns in a predictable and simple manner are required.…”

Section: Introductionmentioning

confidence: 99%

Tuning the Dimensions and Periodicities of Nanostructures Starting from the Same Polystyrene‐block‐poly(2‐vinylpyridine) Diblock Copolymer

Krishnamoorthy

Pugin

Brugger

et al. 2006

Adv Funct Materials

102

View full text Add to dashboard Cite

The controlled tuning of the characteristic dimensions of two‐dimensional arrays of block‐copolymer reverse micelles deposited on silicon surfaces is demonstrated. The polymer used is polystyrene‐block‐poly(2‐vinylpyridine) (91 500‐b‐105 000 g mol–1). Reverse micelles of this polymer with different aggregation numbers have been obtained from different solvents. The periodicity of the micellar array can be systematically varied by changing copolymer concentration, spin‐coating speeds, and by using solvent mixtures. The profound influence of humidity on the micellar film structure and the tuning of the film topography through control of humidity are presented. Light scattering, atomic force microscopy, scanning electron microscopy, transmission electron microscopy, and X‐ray photoelectron spectroscopy were used for characterization. As possible applications, replication of micellar array topography with polydimethylsiloxane and post‐loading of the micelles to form iron oxide nanoparticle arrays are presented.

show abstract

“…After the complete removal of the template, allowing a native SiO x layer to form on the Si, and evaporating a metal, such as Al, a semiconductor capacitor with increased charge storage capacities was produced in a straightforward manner. Guarini et al [39] further investigated the conditions for template generation and showed that CHF 3 could be used as an alternative RIE gas. The hole pattern in silicon was also tone-reversed to form Si 3 N 4 pillars by a three-step process.…”

Section: (A) Ps-b-pi and Ps-b-pbmentioning

confidence: 99%

Pattern transfer using block copolymers

Gunkel

Russell

2013

Phil. Trans. R. Soc. A.

View full text Add to dashboard Cite

To meet the increasing demand for patterning smaller feature sizes, a lithography technique is required with the ability to pattern sub-20 nm features. While top-down photolithography is approaching its limit in the continued drive to meet Moore's law, the use of directed self-assembly (DSA) of block copolymers (BCPs) offers a promising route to meet this challenge in achieving nanometre feature sizes. Recent developments in BCP lithography and in the DSA of BCPs are reviewed. While tremendous advances have been made in this field, there are still hurdles that need to be overcome to realize the full potential of BCPs and their actual use.

show abstract

Nanoscale patterning using self-assembled polymers for semiconductor applications

Cited by 175 publications

References 15 publications

Patterning with block copolymer thin films

Patterning with block copolymer thin films

Tuning the Dimensions and Periodicities of Nanostructures Starting from the Same Polystyrene‐block‐poly(2‐vinylpyridine) Diblock Copolymer

Pattern transfer using block copolymers

Contact Info

Product

Resources

About