Nanoscale piezoelectric surface modulation for adaptive extreme ultraviolet and soft x-ray optics

Nematollahi, Mohammadreza; Lucke, Philip; Bayraktar, Muharrem; Yakshin, Andrey; Rijnders, Guus; Bijkerk, F.

doi:10.1364/ol.44.005104

Cited by 6 publications

(5 citation statements)

References 15 publications

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“…The piezoelectric stress coefficient, e 31 , is more practical to characterize the performance of most actual devices, though some devices include adaptive extreme ultraviolet and soft Xray optics. 50 For instance, the figures of merit for sensors and energy harvesters are represented by e 31 and dielectric constant. The effective piezoelectric stress coefficient, e 31,eff , is widely utilized to characterize the thin film piezoelectric property, which is calculated from the curvature of a cantilever due to the actuation of the piezoelectric film on top of the cantilever beam.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Large Piezoelectric Response in Lead-Free (Bi_0.5Na_0.5)TiO₃-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Shiraishi

Hasegawa

Ishihama

et al. 2021

ACS Appl. Mater. Interfaces

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Strong electromechanical coupling is observed in tetragonal Pb-free 0.7(Bi 0.5 Na 0.5 )-TiO 3 -0.3BaTiO 3 films, which is far from the morphotropic phase boundary, prepared by pulsed laser deposition on a Si substrate. The tensile strain induced during cooling causes in-plane polarization in an oriented film on a Si substrate, while an epitaxial film grown on a SrTiO 3 substrate exhibits out-ofplane polarization. S−E curve analysis reveals that the obtained piezoelectric coefficient for the film on the Si substrate (d 33,f ≈ 275 pm/V) is approximately eight times higher than that for the epitaxial film on the SrTiO 3 substrate (d 33,f ≈ 34 pm/V). In situ X-ray diffraction analysis confirms the occurrence of domain switching under an electric field from in-plane to out-of-plane polarization. An effective piezoelectric stress coefficient, e 31,eff , of ∼19 C/m 2 is obtained from a Si cantilever sample, which is the highest among the reported values for Pb-free piezoelectric films and is comparable to those for Pb-based films. The significant piezoelectric response produced by domain switching in the Pb-free materials with the composition far from the morphotropic phase boundary will expand future applications due to their both outstanding properties and environmental sustainability.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Large Piezoelectric Response in Lead-Free (Bi_0.5Na_0.5)TiO₃-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Shiraishi

Hasegawa

Ishihama

et al. 2021

ACS Appl. Mater. Interfaces

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“…Ferroelectric thin films are of high interest for applications such as ferroelectric memories and in microelectromechanical systems as sensors and actuators. − In particular, PbTi 1– x Zr x O 3 (PZT) is favored because of its outstanding ferroelectric and piezoelectric properties. These functional properties of PZT thin films are highly dependent on several material properties, such as the stoichiometry, crystal orientation, and microstructure.…”

Section: Introductionmentioning

confidence: 99%

Influence of the Template Layer on the Structure and Ferroelectric Properties of PbZr_0.52Ti_0.48O₃ Films

et al. 2022

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The microstructure of the PbZr 0.52 Ti 0.48 O 3 (PZT) films is known to influence the ferroelectric properties, but so far mainly the effect of the deposition conditions of the PZT has been investigated. To our knowledge, the influence of the underlying electrode layer and the mechanisms leading to changes in the PZT microstructure have not been explored. Using LaNiO 3 (LNO) as the bottom electrode material, we investigated the evolution of the PZT microstructure and ferroelectric properties for changing LNO pulsed-laser deposition conditions. The explored deposition conditions were the O 2 pressure, total pressure, and thickness of the electrode layer. Increasing both the O 2 pressure and the thickness of the electrode layer changes the growth of PZT from a smooth, dense film to a rough, columnar film. We explain the origin of the change in PZT microstructure as the increased roughness of the electrode layer in relaxing the misfit strain. The strain relaxation mechanism is evidenced by the increase in the crystal phase with bulk LNO unit cell dimensions in comparison to the crystal phase with substrate-clamped unit cell dimensions. We explain the change from a dense to a columnar microstructure as a result of the change in the growth mode from Frank–van der Merwe to Stranski–Krastanov. The ferroelectric properties of the columnar films are improved compared to those of the smooth, dense films. The ability to tune the ferroelectric properties with the microstructure is primarily relevant for ferroelectric applications such as actuators and systems for energy harvesting and storage.

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“…Hysteresis is a common challenge in the use of piezoelectric ceramics and thin films in applications such as sensors, actuators, ferroelectric memories, and energy harvesters. [ 1–8 ] Hysteresis can cause energy loss in energy harvesting devices or positioning inaccuracy in actuators. [ 9 ] Several studies have identified the viscous interaction of ferroelectric domains as the source of hysteresis and the associated dielectric/ferroelectric loss for sub‐coercive field excitations.…”

Section: Introductionmentioning

confidence: 99%

Influence of DC Bias on the Hysteresis, Loss, and Nonlinearity of Epitaxial PbZr_0.55Ti_0.45O₃ Films

Lucke

Bayraktar

Schukkink

et al. 2021

Adv Elect Materials

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The hysteresis, loss, and nonlinearity of the strain and polarization response of an epitaxial PbZr0.55Ti0.45O3 film are experimentally investigated for non‐switching AC excitation fields at a DC bias of 20 kV cm−1 in the 70 Hz to 5 kHz range. The measured strain is hysteretic and linear, whereas the polarization is hysteretic and highly nonlinear with excitation amplitude. Furthermore, compared to the case with zero bias, the effective piezoelectric coefficient that is extracted from the strain response is almost not changed for the investigated field range. In contrast, the loss tangent and nonlinearity of the polarization response are strongly reduced. The observations can not be explained by the Rayleigh model and its extensions, but are very well explained by the recently proposed polarization rotation model through addition of a non‐zero bias field term to the model. This model describes the film properties as the result of the nonlinear rotation of the polarization vector within the unit‐cell in response to the applied field, which is accompanied with viscous domain interaction. These results demonstrate that the polarization rotation model can describe the film response in a broad range of excitation frequencies and amplitudes, which far the applicable range of the Rayleigh model.

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Nanoscale piezoelectric surface modulation for adaptive extreme ultraviolet and soft x-ray optics

Cited by 6 publications

References 15 publications

Large Piezoelectric Response in Lead-Free (Bi_0.5Na_0.5)TiO₃-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Large Piezoelectric Response in Lead-Free (Bi_0.5Na_0.5)TiO₃-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Influence of the Template Layer on the Structure and Ferroelectric Properties of PbZr_0.52Ti_0.48O₃ Films

Influence of DC Bias on the Hysteresis, Loss, and Nonlinearity of Epitaxial PbZr_0.55Ti_0.45O₃ Films

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Nanoscale piezoelectric surface modulation for adaptive extreme ultraviolet and soft x-ray optics

Cited by 6 publications

References 15 publications

Large Piezoelectric Response in Lead-Free (Bi0.5Na0.5)TiO3-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Large Piezoelectric Response in Lead-Free (Bi0.5Na0.5)TiO3-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Influence of the Template Layer on the Structure and Ferroelectric Properties of PbZr0.52Ti0.48O3 Films

Influence of DC Bias on the Hysteresis, Loss, and Nonlinearity of Epitaxial PbZr0.55Ti0.45O3 Films

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Product

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About

Large Piezoelectric Response in Lead-Free (Bi_0.5Na_0.5)TiO₃-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Large Piezoelectric Response in Lead-Free (Bi_0.5Na_0.5)TiO₃-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Influence of the Template Layer on the Structure and Ferroelectric Properties of PbZr_0.52Ti_0.48O₃ Films

Influence of DC Bias on the Hysteresis, Loss, and Nonlinearity of Epitaxial PbZr_0.55Ti_0.45O₃ Films