Nanoscale profiling and memristor effect of ZnO thin films for RRAM and neuromorphic devices application

Климин, В. С.; Tominov, R. V.; Avilov, V. I.; Dukhan, Denis D.; Rezvan, A A; Zamburg, Evgeny; Smirnov, V. A.; Ageev, O A

doi:10.1117/12.2522322

Cited by 4 publications

(2 citation statements)

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“…Currently, further increases in the efficiency of big-data processing are limited by the resolution and the cost of manufacturing complementary metal oxide semiconductor (CMOS) transistors less than 10 nanometers in size, creating the difficulty of sustainable and cost-effective scaling [ 7 , 8 ]. Therefore, there is a need to develop and research a new base of non-volatile elements of electronics with increased computational efficiency, which would meet the requirements of the information-technology market [ 9 , 10 , 11 , 12 , 13 ].…”

Section: Introductionmentioning

confidence: 99%

Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures

et al. 2022

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This article presents the results of experimental studies of the impact of electrode material and the effect of nanoscale film thickness on the resistive switching in forming-free nanocrystalline ZnO films grown by pulsed laser deposition. It was demonstrated that the nanocrystalline ZnO film with TiN, Pt, ZnO:In, and ZnO:Pd bottom electrodes exhibits a nonlinear bipolar effect of forming-free resistive switching. The sample with Pt showed the highest resistance values RHRS and RLRS and the highest value of Uset = 2.7 ± 0.4 V. The samples with the ZnO:In and ZnO:Pd bottom electrode showed the lowest Uset and Ures values. An increase in the number of laser pulses from 1000 to 5000 was shown to lead to an increase in the thickness of the nanocrystalline ZnO film from 7.2 ± 2.5 nm to 53.6 ± 18.3 nm. The dependence of electrophysical parameters (electron concentration, electron mobility, and resistivity) on the thickness of the forming-free nanocrystalline ZnO film for the TiN/ZnO/W structure was investigated. The endurance test and homogeneity test for TiN/ZnO/W structures were performed. The structure Al2O3/TiN/ZnO/W with a nanocrystalline ZnO thickness 41.2 ± 9.7 nm was shown to be preferable for the manufacture of ReRAM and memristive neuromorphic systems due to the highest value of RHRS/RLRS = 2307.8 ± 166.4 and low values of Uset = 1.9 ± 0.2 V and Ures = −1.3 ± 0.5 V. It was demonstrated that the use of the TiN top electrode in the Al2O3/TiN/ZnO memristor structure allowed for the reduction in Uset and Ures and the increase in the RHRS/RLRS ratio. The results obtained can be used in the manufacturing of resistive-switching nanoscale devices for neuromorphic computing based on the forming-free nanocrystalline ZnO oxide films.

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Section: Introductionmentioning

confidence: 99%

Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures

et al. 2022

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“…To implement the operation of a neuron at the hardware level, a number of requirements are imposed on the element base in terms of energy efficiency, as well as the presence of non-volatility and multibit properties (the ability of an element to take three or more stable states). One of the ways to implement a neuromorphic system at the hardware level is to manufacture an array of memristors using cross-bar technology [ 22 , 23 , 24 ]. In this case, each memristor will act as a biological neuron, and the connecting contact will act as a synapse.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Growth Parameters on Electrophysical and Memristive Properties of Vanadium Oxide Thin Films

et al. 2020

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We have experimentally studied the influence of pulsed laser deposition parameters on the morphological and electrophysical parameters of vanadium oxide films. It is shown that an increase in the number of laser pulses from 10,000 to 60,000 and an oxygen pressure from 3 × 10−4 Torr to 3 × 10−2 Torr makes it possible to form vanadium oxide films with a thickness from 22.3 ± 4.4 nm to 131.7 ± 14.4 nm, a surface roughness from 7.8 ± 1.1 nm to 37.1 ± 11.2 nm, electron concentration from (0.32 ± 0.07) × 1017 cm−3 to (42.64 ± 4.46) × 1017 cm−3, electron mobility from 0.25 ± 0.03 cm2/(V·s) to 7.12 ± 1.32 cm2/(V·s), and resistivity from 6.32 ± 2.21 Ω·cm to 723.74 ± 89.21 Ω·cm. The regimes at which vanadium oxide films with a thickness of 22.3 ± 4.4 nm, a roughness of 7.8 ± 1.1 nm, and a resistivity of 6.32 ± 2.21 Ω·cm are obtained for their potential use in the fabrication of ReRAM neuromorphic systems. It is shown that a 22.3 ± 4.4 nm thick vanadium oxide film has the bipolar effect of resistive switching. The resistance in the high state was (89.42 ± 32.37) × 106 Ω, the resistance in the low state was equal to (6.34 ± 2.34) × 103 Ω, and the ratio RHRS/RLRS was about 14,104. The results can be used in the manufacture of a new generation of micro- and nanoelectronics elements to create ReRAM of neuromorphic systems based on vanadium oxide thin films.

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