Nanoscale self-affine surface smoothing by ion bombardment

Goswami, Dipak Kumar; Dev, B. N.

doi:10.1103/physrevb.68.033401

Cited by 29 publications

(22 citation statements)

References 18 publications

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“…These competing processes are responsible for the creation of characteristic surface features like quasiperiodic ripples and self-affine topographies [22]. The roughness exponent (a) is determined from the index, d using the rela- [20].…”

Section: Resultsmentioning

confidence: 99%

Grain growth and crack formation in NiO thin films by swift heavy ion irradiation

Mallick

Biswal

Rath

et al. 2010

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Resultsmentioning

confidence: 99%

Grain growth and crack formation in NiO thin films by swift heavy ion irradiation

Mallick

Biswal

Rath

et al. 2010

Nuclear Instruments and Methods in Physics Research Section B:

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“…In their example, they attributed the smoothing predominantly to irradiation-induced viscous flow. Goswami and Dev [26] observed a surface smoothening in silicon surfaces irradiated by a 2-MeV Si + ion beam. They explained the origin of irradiation induced surface smoothening as follows.…”

Section: Surface Evolution With Ion Beam Irradiationmentioning

confidence: 96%

Swift heavy ion induced surface and microstructural evolution in metallic glass thin films

Thomas

Ramanujan

et al. 2012

Nuclear Instruments and Methods in Physics Research Section B:

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a b s t r a c tSwift heavy ion induced changes in microstructure and surface morphology of vapor deposited Fe-Ni based metallic glass thin films have been investigated by using atomic force microscopy, X-ray diffraction and transmission electron microscopy. Ion beam irradiation was carried out at room temperature with 103 MeV Au 9+ beam with fluences ranging from 3 Â 10 11 to 3 Â 10 13 ions/cm 2 . The atomic force microscopy images were subjected to power spectral density analysis and roughness analysis using an image analysis software. Clusters were found in the image of as-deposited samples, which indicates that the film growth is dominated by the island growth mode. As-deposited films were amorphous as evidenced from X-ray diffraction; however, high resolution transmission electron microscopy measurements revealed a short range atomic order in the samples with crystallites of size around 3 nm embedded in an amorphous matrix. X-ray diffraction pattern of the as-deposited films after irradiation does not show any appreciable changes, indicating that the passage of swift heavy ions stabilizes the short range atomic ordering, or even creates further amorphization. The crystallinity of the as-deposited Fe-Ni based films was improved by thermal annealing, and diffraction results indicated that ion beam irradiation on annealed samples results in grain fragmentation. On bombarding annealed films, the surface roughness of the films decreased initially, then, at higher fluences it increased. The observed change in surface morphology of the irradiated films is attributed to the interplay between ion induced sputtering, volume diffusion and surface diffusion.

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“…They can, however, drift parallel to the surface providing an effective surface diffusion. Apparently this ion-beam induced effective surface diffusion causes nanometer-scale surface smoothing [5]. Discovery of this ion-irradiation induced nanoscale surface smoothing phenomenon leading to a self-affine fractal surface inspired further investigations [15] including the present one.…”

Section: Introductionmentioning

confidence: 97%

“…These competing processes are responsible for the creation of surface features like quasiperiodic ripple [8][9][10][11] and selfaffine fractal topographies [3][4][5]11]. In the ion mass-energy regime where sputtering is dominant, surface roughening is observed [3,4,11].…”

Section: Introductionmentioning

confidence: 99%

Ge growth on ion-irradiated Si self-affine fractal surfaces

Goswami¹,

Bhattacharjee²,

Dev³

2004

Surface Science

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We have carried out scanning tunneling microscopy experiments under ultrahigh vacuum condition to study the morphology of ultrathin Ge films eposited on pristine Si(100) and ion-irradiated Si(100) self-affine fractal surfaces. The pristine and the ion-irradiated Si(100) surface have roughness exponents of alpha=0.19+/-0.05 and alpha=0.82+/-0.04 respectively. These measurements were carried out on two halves of the same sample where only one half was ion-irradiated. Following deposition of a thin film of Ge (~6 A) the roughness exponents change to 0.11+/-0.04 and 0.99+/-0.06, respectively. Upon Ge deposition, while the roughness increases by more than an order of magnitude on the pristine surface, a smoothing is observed for the ion-irradiated surface. For the ion-irradiated surface the correlation length xi increases from 32 nm to 137 nm upon Ge deposition. Ge grows on Si surfaces in the Stranski-Krastanov or layer-plus-island mode where islands grow on a wetting layer of about three atomic layers. On the pristine surface the islands are predominantly of square or rectangular shape, while on the ion-irradiated surface the islands are nearly diamond shaped. Changes of adsorption behaviour of deposited atoms depending on the roughness exponent (or the fractal dimension) of the substrate surface are discussed.Comment: 5 pages, 2 figures and 1 tabl

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Nanoscale self-affine surface smoothing by ion bombardment

Cited by 29 publications

References 18 publications

Grain growth and crack formation in NiO thin films by swift heavy ion irradiation

Grain growth and crack formation in NiO thin films by swift heavy ion irradiation

Swift heavy ion induced surface and microstructural evolution in metallic glass thin films

Ge growth on ion-irradiated Si self-affine fractal surfaces

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