2021
DOI: 10.1007/s42341-021-00356-7
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Nanoscale SiOx Tunnel Oxide Deposition Techniques and Their Influence on Cell Parameters of TOPCon Solar Cells

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Cited by 14 publications
(12 citation statements)
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“…TOPCon cell is another promising Si photovoltaic device with a special structure containing an oxide/poly-Si contact at the rear side, giving rise to favorable carrier transport and recombination suppression, as shown in Figure a . In TOPCon cells, an n-type Si wafer is widely used as the absorber.…”
Section: Different Structures Of Si Solar Cells and Perovskite/si Tan...mentioning
confidence: 99%
See 1 more Smart Citation
“…TOPCon cell is another promising Si photovoltaic device with a special structure containing an oxide/poly-Si contact at the rear side, giving rise to favorable carrier transport and recombination suppression, as shown in Figure a . In TOPCon cells, an n-type Si wafer is widely used as the absorber.…”
Section: Different Structures Of Si Solar Cells and Perovskite/si Tan...mentioning
confidence: 99%
“…In this design, the emitter is coated on the Si absorber to separate photoinduced charge carriers, and antireflection coating (ARC) is added to reduce light reflection and optical losses on the front side; a dielectric AlO x /SiN x passivation layer is deposited on the rear side to reduce surface recombination, and localized Al–Si contacts are constructed to reduce the contact area between the metal electrode and Si . The TOPCon solar cells contain an ultrathin silicon oxide (SiO 2 ) layer as a tunnel oxide for selective charge transport and a doped poly-Si layer as back ARC, both of which contribute to passivation . HJT solar cells also benefit from the passivating contact which is contributed by hydrogenated amorphous silicon (a-Si:H) layers rather than SiO 2 and poly-Si layers .…”
mentioning
confidence: 99%
“…20,21 Thermal oxidation is currently the most widely used in the mass production process design, where the equipment is well developed and processing technologies are easily adapted to the current silicon solar cell fabrication lines. The thin oxide layer can be prepared by a short thermal oxidation (from 1 to 5 min) at a temperature range of between 500 and 600 C. 22 This is the most common way of combining the oxidation process with the poly-Si thin film deposition process in a single lowpressure chemical vapour deposition (LPCVD) tube. 23 In terms of film uniformity, equipment and process development in recent years has enabled a spatial thickness variance of lower than 5% under continuous processing, even for the wafer sizes up to 210 mm side length.…”
Section: Tunnel Oxide Layer Formationmentioning
confidence: 99%
“…The thin oxide layer can be prepared by a short thermal oxidation (from 1 to 5 min) at a temperature range of between 500 and 600°C 22 . This is the most common way of combining the oxidation process with the poly‐Si thin film deposition process in a single low‐pressure chemical vapour deposition (LPCVD) tube 23 .…”
Section: Topcon Process and Structurementioning
confidence: 99%
“…The only currently recorded deficiency of solar energy collection is its low efficiency of energy collecting devices. Currently available PV modules are between 15% to 20% efficient, and the most technologically advanced are up to 26% efficient [88]. A relatively low efficiency affects the surface of energy generating panels.…”
Section: Literature Reviewmentioning
confidence: 99%