2018
DOI: 10.1016/j.matlet.2017.11.043
|View full text |Cite
|
Sign up to set email alerts
|

Nanoscale structural damage due to focused ion beam milling of silicon with Ga ions

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
17
0
1

Year Published

2018
2018
2025
2025

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 44 publications
(18 citation statements)
references
References 11 publications
0
17
0
1
Order By: Relevance
“…At this point, it is important to comment on the effect of FIB-milling damage on the metamaterial geometry. As reported in the pertinent literature [19,45,53], the layer affected by the FIB can span from a few to several nanometres in terms of thickness. In particular, it has been experimentally observed and simulated that for very small grazing angles of the ion beam (e.g.…”
Section: Resultsmentioning
confidence: 91%
See 2 more Smart Citations
“…At this point, it is important to comment on the effect of FIB-milling damage on the metamaterial geometry. As reported in the pertinent literature [19,45,53], the layer affected by the FIB can span from a few to several nanometres in terms of thickness. In particular, it has been experimentally observed and simulated that for very small grazing angles of the ion beam (e.g.…”
Section: Resultsmentioning
confidence: 91%
“…In particular, it has been experimentally observed and simulated that for very small grazing angles of the ion beam (e.g. 10°), the damaged layer is generally thinner than ~30 nm [45,54]. Although this dimension is rather limited, it is important to note that it is approximately one tenth of the in-plane separation distance (300 nm) and therefore, being 20% of the total joint thickness, may have an impact on the elastic behaviour of the entire metamaterial structure.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The aim of this operation was to control and reduce the degree of pillar tapering and barrelling, and to reduce the damaged “skin layer” of the micro-pillar samples. This layer arises as a consequence of ion beam damage due to Ga + ions penetrating the material surface, causing a cascade of atomic displacements, creating a population of defects and leading to material amorphisation [ 21 ]. This effect has been the subject of a number of recent studies that have primarily focused on silicon, although other materials have also been considered [ 13 , 14 ].…”
Section: Experimental Methodsmentioning
confidence: 99%
“…В ряде случаев такая обработка действительно слабо сказывается на механических свойствах материала. Однако в ряде случаев, особенно при D < 1 µm, последствия имплантации ионов, бомбардирующих поверхность, и ее аморфизация требуют дополнительного изучения, обсуждения и учета [130][131][132][133][134]. Для уменьшения возможных повреждений материала обычно ток в FIB снижают в процессе перехода от грубой ускоренной резки к финишной по-лировке поверхности образца с ∼ 10 nA до ∼ 0.1 nA, а иногда и до 0.01 nA.…”
Section: In Situ исследования механических свойств и динамики структуunclassified