Charge transport across the interfaces in complex oxides attracts a lot of attention because it allows creating novel functionalities useful for device applications. In particular, it has been observed that movable domain walls in epitaxial BiFeO 3 films possess enhanced conductivity that can be used for read out in ferroelectric-based memories. In this work, the relation between the polarization and conductivity in sol-gel BiFeO 3 films with special emphasis on grain boundaries as natural interfaces in polycrystalline ferroelectrics is investigated. The grains exhibit self-organized domain structure in these films, so that the "domain clusters" consisting of several grains with aligned polarization directions are formed. Surprisingly, grain boundaries between these clusters (with antiparallel polarization direction) have significantly higher electrical conductivity in comparison to "inter-cluster" grain boundaries, in which the conductivity was even smaller than in the bulk. As such, polarization-dependent