Memristor and Memristive Neural Networks 2018
DOI: 10.5772/intechopen.69024
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Nanoscale Switching and Degradation of Resistive Random Access Memory Studied by In Situ Electron Microscopy

Abstract: The metal-filament-type resistive random access memories (ReRAMs) with copper were investigated from the point of view of dynamical microstructure evolution in the repetitive switching operations using in situ transmission electron microscopy (in situ TEM). Through a series of experiments for uncovered solid electrolyte films, stacked devices, and nanofabricated cells, formation and erasure of the copper filaments and deposits were confirmed. The behavior of the filament and deposit depended on the switching c… Show more

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Cited by 1 publication
(2 citation statements)
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References 57 publications
(133 reference statements)
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“…However, in conventional ECM or VCM-based memristors, the random formation and rupture of conductive filaments result in significant temporal and spatial variations. [212][213][214][215][216] To F I G U R E  (A) Schematic illustration of the phase-separated oxide (PSO) memristor (left). The set voltage variation of the PSO-memristive device after 1000 current-voltage (I-V) sweeps (middle) and all 32 devices (right).…”
Section: Mechanismmentioning
confidence: 99%
See 1 more Smart Citation
“…However, in conventional ECM or VCM-based memristors, the random formation and rupture of conductive filaments result in significant temporal and spatial variations. [212][213][214][215][216] To F I G U R E  (A) Schematic illustration of the phase-separated oxide (PSO) memristor (left). The set voltage variation of the PSO-memristive device after 1000 current-voltage (I-V) sweeps (middle) and all 32 devices (right).…”
Section: Mechanismmentioning
confidence: 99%
“…However, in conventional ECM or VCM‐based memristors, the random formation and rupture of conductive filaments result in significant temporal and spatial variations. [ 212–216 ] To address these limitations, reducing the stochasticity of filament formation and rupture is critical. Numerous researches have focused on mitigating this randomness.…”
Section: Memristor‐based Artificial Sensory Systemmentioning
confidence: 99%