Nanoscaled Silicon Based Heterostructures Formed by Interface Mediated Endotaxy

Abstract

New types of substrates are needed for further scaling in CMOS microelectronics. We speculate that this new type of materials can be semiconductor heterostructure on insulator (HOI) compatible with current silicon planar CMOS technology. In this work an effect of interface mediated endotaxial (IME) growth of thin InSb film at Si/SiO2 bonded interface was experimentally observed and investigated for the first time. Joint semiconductor material stack obtained by hydrogen transfer of one layer material (silicon) and endotaxially grown second one (indium antimonide) placed initially into amorphous silicon dioxide film is presented. Thermodynamic, kinetic and lattice mismatch parameter influences on IME process are considered.