2016
DOI: 10.1063/1.4962635
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Nanosecond spin relaxation times in single layer graphene spin valves with hexagonal boron nitride tunnel barriers

Abstract: Abstract:We present an experimental study of spin transport in single layer graphene using atomic sheets of hexagonal boron nitride (h-BN) as a tunnel barrier for spin injection. While h-BN is expected to be favorable for spin injection, previous experimental studies have been unable to achieve spin relaxation times in the nanosecond regime, suggesting potential problems originating from the contacts. Here, we investigate spin relaxation in graphene spin valves with h-BN barriers and observe room temperature s… Show more

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Cited by 47 publications
(81 citation statements)
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“…The growth of CVDhBN can suffer from the inhomogeneous surface coverage, and the copper etching steps could also damage the CVDhBN and leave some underetched residues, leading to uneven interfacial growth of ferromagnetic cobalt on top [15], which may cause spin dephasing in graphene via randomly oriented magnetic fringe fields near the contacts [39]. Moreover, during the wet transfer of CVD-hBN, some unwanted contamination may get trapped at the interface with graphene, and graphene itself comes in direct contact with DI water.…”
Section: Discussionmentioning
confidence: 99%
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“…The growth of CVDhBN can suffer from the inhomogeneous surface coverage, and the copper etching steps could also damage the CVDhBN and leave some underetched residues, leading to uneven interfacial growth of ferromagnetic cobalt on top [15], which may cause spin dephasing in graphene via randomly oriented magnetic fringe fields near the contacts [39]. Moreover, during the wet transfer of CVD-hBN, some unwanted contamination may get trapped at the interface with graphene, and graphene itself comes in direct contact with DI water.…”
Section: Discussionmentioning
confidence: 99%
“…Furthermore, a fully hBN-encapsulated monolayer-graphene with exfoliated-hBN tunnel barriers showed differential spin polarizations of 1-2 % with monolayer-hBN contacts [13][14][15][16], up to 100% with bilayerhBN contacts [16], and up to 6% with trilayer-hBN contacts [17]. Thicknesses of more than three layers are not suitable for * Author to whom all correspondence should be addressed: m.gurram@rug.nl spin injection [15,17,18] due to very high tunneling interface resistance. However, for large-scale spintronics applications, it is important to incorporate large-area chemical vapor deposition (CVD) grown hBN tunnel barriers in spin valves [18][19][20][21] and magnetic tunnel junctions [22,23].…”
Section: Introductionmentioning
confidence: 99%
“…To prepare clean heterostructures of graphene/YIG we employ a dry transfer technique [13,25] To modulate the spin signal in graphene, we align the magnetization of electrode E2 and E3 in either parallel (P) or antiparallel (AP) configuration and apply a fixed magnitude of magnetic field, B ROT = 15 4 mT, in the plane of the graphene. Note that this magnetic field is smaller than what is required to change or switch the electrode but large enough to saturate the YIG magnetization [19].…”
mentioning
confidence: 99%
“…To prepare clean heterostructures of graphene/YIG we employ a dry transfer technique [13,25] as discussed in supplementary material [26]. The optical image of the hexagonal boron nitride (h-BN)/graphene stack on YIG is shown in Figure 1(a), where thin h-BN is highlighted by black dotted lines.…”
mentioning
confidence: 99%
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