Nanosecond switching in GeTe phase change memory cells

Bruns, Gunnar; Merkelbach, P.; Schlockermann, Carl; Salinga, Martin; Wuttig, Matthias; Happ, T.; Philipp, J. B.; Kund, M.

doi:10.1063/1.3191670

Cited by 421 publications

(283 citation statements)

References 12 publications

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“…They are known to exhibit a fast amorphous-crystalline phase transition which can be electrically triggered. 80,81 Recently, Polking et al demonstrated that…”

Section: Germanium Telluridementioning

confidence: 99%

New materials for tunable plasmonic colloidal nanocrystals

2014

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We present a review on the emerging materials for novel plasmonic colloidal nanocrystals. We start by explaining the basic processes involved in surface plasmon resonances in nanoparticles and then discuss the classes of nanocrystals that to date are particularly promising for tunable plasmonics: nonstoichiometric copper chalcogenides, extrinsically doped metal oxides, oxygen-deficient metal oxides and conductive metal oxides. We additionally introduce other emerging types of plasmonic nanocrystals and finally we give an outlook on nanocrystals of materials that could potentially display interesting plasmonic properties.

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“…They are known to exhibit a fast amorphous-crystalline phase transition which can be electrically triggered. 80,81 Recently, Polking et al demonstrated that…”

Section: Germanium Telluridementioning

confidence: 99%

New materials for tunable plasmonic colloidal nanocrystals

2014

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“…These memory technologies are based on the large resistivity contrast between the two phases of the active material-mostly chalcogenide alloys such as Ge 2 Sb 2 Te 5 . In addition, the ability to switch reversibly [3,4] and quickly [5] between the two phases by the application of electrical stimuli renders these materials good candidates for electrical data storage. Herein, the crystalline, low resistance (SET) state is reached from the amorphous, high resistance (RESET) phase via an electrical breakdown effect ("threshold switching") followed by Joule-heating and subsequent fast crystallization, whereas the RESET state is reached by melting the material with a large current followed by rapid cooling ("melt-quenching").…”

Section: Introductionmentioning

confidence: 99%

“…By choosing the materials Ge 2 Sb 2 Te 5 , and AgIn-doped Sb 2 Te (more precisely Ag 4 In 3 Sb 67 Te 26 ) we furthermore aim at studying the apparent contradiction between the two aforementioned experiments [31,32]. The third material, GeTe, is studied due to its promising switching characteristics [5]. In the literature the majority of experiments are done in melt-quenched amorphous phase change memory cells.…”

Section: Introductionmentioning

confidence: 99%

Role of activation energy in resistance drift of amorphous phase change materials

et al. 2014

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The time evolution of the resistance of amorphous thin films of the phase change materials Ge 2 Sb 2 Te 5 , GeTe and AgIn-Sb 2 Te is measured during annealing at T = 80 • C. The annealing process is interrupted by several fast temperature dips to determine the changing temperature dependence of the resistance. This procedure enables us to identify to what extent the resistance increase over time can be traced back to an increase in activation energy E A or to a rise of the prefactor R * . We observe that, depending on the material, the dominating contribution to the increase in resistance during annealing can be either a change in activation energy (Ge 2 Sb 2 Te 5 ) or a change in prefactor (AgIn-Sb 2 Te). In the case of GeTe, both contribute about equally. We conclude that any phenomenological model for the resistance drift in amorphous phase change materials that is based on the increase of one parameter alone (e.g., the activation energy) cannot claim general validity.

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“…The stoichiometric compounds along the pseudo-bianry line between GeTe and Bi 2 Te 3 are Ge 27 9 , which were analyzed by ICP-AES. The Bi content in the film is decreased from 18.2% to 17.5% and the Te content also reduced from 54.5% to 49.8% for the ratio of 3:1.…”

Section: Resultsmentioning

confidence: 99%

“…The N 7.9 (Ge 46.9 Bi 7.2 Te 45.9 ) film can be considered as a nitrogen doped GeTe film with addition of Bi. Previous report showed that a GeTe film is a growth dominant material with very short time of set programming less than 16 nsec, 27 which is significantly delayed up to several µsec in N 12 Ge 48 Te 40 film due to the presence of Ge-N bonding. 28,29 In comparison, the N 7.9 (Ge 46.9 Bi 7.2 Te 45.9 ) film showed a very short time of set programming as much as 14 nm upon being employed in our PCM devices.…”

Section: Resultsmentioning

confidence: 99%

Improvement of reliability and speed of phase change memory devices with N7.9(Ge46.9Bi7.2Te45.9) films

Park

Kim

et al. 2015

AIP Advances

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In this study, we propose a nitrogen-incorporated GeBiTe ternary phase of N7.9(Ge46.9Bi7.2Te45.9) as a phase change material for reliable PCM (Phase Change Memory) with high speed operation. We found that the N7.9(Ge46.9Bi7.2Te45.9) film shows the resistance value of 40 kΩ after annealing at 440oC for 10 minutes, which is much higher than the value of 3.4 kΩ in the case of conventional N7.0(Ge22.0Sb22.0Te56.0) films. A set operation time of 14 nsec was achieved in the devices due to the increased probability of the nucleation by the addition of the elemental Bi. The long data retention time of 10 years at 85oC on the base of 1% failure was obtained as the result of higher activation energy of 2.52 eV for the crystallization compared to the case of N7.0(Ge22.0Sb22.0Te56.0) film, in which the activation energy is 2.1 eV. In addition, a reset current reduction of 27% and longer cycles of endurance as much as 2 order of magnitude compared to the case of N7.0(Ge22.0Sb22.0Te56.0) were observed at a set operation time of 14 nsec. Our results show that N7.9(Ge46.9Bi7.2Te45.9) is highly promising for use as a phase change material in reliable PCMs with high performance and also in forthcoming storage class memory applications, too.

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Nanosecond switching in GeTe phase change memory cells

Cited by 421 publications

References 12 publications

New materials for tunable plasmonic colloidal nanocrystals

New materials for tunable plasmonic colloidal nanocrystals

Role of activation energy in resistance drift of amorphous phase change materials

Improvement of reliability and speed of phase change memory devices with N7.9(Ge46.9Bi7.2Te45.9) films

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