“…To create high-performance selector devices that allow accurate information storage and retrieval, various TS materials have been investigated. Chalcogenide materials, such as Si and/or Ge-based As–Te thin films, show excellent TS features, but these materials require the fabrication of complex materials and experience thermal degradation after repeated cycling. ,, Additionally, volatile TS characteristics have been observed in thin films of metal-oxide materials, such as NbO 2 , VO 2 , and NiO 2 , which possess Mott-type metal-to-insulator transitions due to strongly correlated d-electrons. − V 2 O 5 has garnered attention because of its splendid potential for applications, such as electrochromic devices, optical switching devices, smart windows, and chemical gas sensors. − The chemically stable van der Waals layered structure of V 2 O 5 permits intercalation with active metal complexes, leading to research on reversible cathode materials for batteries. − Although the electrical properties of V 2 O 5 have received attention in several theoretical and experimental papers, − reports on its use in memory applications are rare …”