Nanosized silicon particles by inert gas arc evaporation

Hofmeister, H.; Ködderitzsch, P.

doi:10.1016/s0965-9773(99)00099-9

Cited by 14 publications

(6 citation statements)

References 13 publications

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“…The presence of the {110} facets would make the NCs less stable energetically, due to the high surface energy of these facets [50]. The assumption of a local diamond-like structure is in accordance with recent measurements of Si NCs by high-resolution transmission electron microscopy (HRTEM) [21,51]. One may www.pss-b.com also realize NCs as systems without translational symmetry with the higher point-group symmetry I h of an icosahedron.…”

Section: Modelling Of Nanocrystals Capping Shells and Surface Termisupporting

confidence: 78%

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Optical properties of Si and Ge nanocrystals: Parameter‐free calculations

Ramos

Weissker

Furthmüller

et al. 2005

Physica Status Solidi (b)

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An overview is given on the electronic and optical properties of Si and Ge nanocrystals. We model freestanding Si and Ge nanocrystals passivated with H, with up to 363 group-IV atoms and 276 H and oxidized nanocrystals with additional silicon oxide shells, e.g. Si 41 (O 60 Si 42 )(O 108 Si 64 )H 148 . The results discussed are based on parameter-free calculations for relaxed atomic structures. The electronic states and the many-body effects are considered within the density-functional theory and the supercell method. Energy gaps are described within the Kohn-Sham independent-particle picture and within the independentquasiparticle picture, whereas electronic excitations are treated within the delta self-consistent method by pair excitation energies. The projector-augmented wave method allows the calculation of optical matrix elements, oscillator strengths, optical spectra, and radiative lifetimes. We discuss quantum confinement, structural relaxation, oxidation, and the role of defects in oxidized Si NCs.

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Section: Modelling Of Nanocrystals Capping Shells and Surface Termisupporting

confidence: 78%

“…The cores of the resulting dome-like structures can be richer in Si than in Ge [20]. Oxidized Si NCs share the same core-shell structure as the II-VI NCs, though their capping shells are composed by amorphous Si oxide [21].…”

Section: Introductionmentioning

confidence: 99%

Optical properties of Si and Ge nanocrystals: Parameter‐free calculations

Ramos

Weissker

Furthmüller

et al. 2005

Physica Status Solidi (b)

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show abstract

“…These NCs possess the best sphericality but a too high surface energy because of the unfavourable {110} planes [52]. In any case, the assumption of a local diamond-like structure is in accordance with recent measurements of Si NCs by highresolution transmission electron microscopy (HRTEM) [53,54]. One may also realize NCs as systems without translational symmetry with the higher point-group symmetry I h of an icosahedron.…”

Section: Modelling Of Nanocrystalssupporting

confidence: 77%

Electronic excitations in Si and Ge nanocrystals: Parameterfree calculations

Bechstedt

Weissker

Ramos

et al. 2004

phys. stat. sol. (c)

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We describe the modelling of free and oxidized Si and Ge nanaocrystals with up to 363 group-IV atoms using the density functional theory and a supercell method. Electronic excitations are described within the picture of independent Kohn-Sham particles and the ∆SCF method. Matrix elements are computed by means of projector augmented waves. We discuss the influence of several effects such as quantum confinement, structural relaxation, strain, alloying, and oxidation.

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“…1. Surprisingly, lattice contraction corresponding to stress of several GPa was confirmed also by HRTEM measurements of SiNCs prepared by inert gas arc evaporation, 32 presence of stress was confirmed by x-ray measurements in ME SiNC samples based on superlattices. 33 Stress can be found also in cases slightly different from but analogical to oxide-passivated ME SiNCs.…”

Section: By Reactive Ion Etching In Plasma Bymentioning

confidence: 62%

Luminescence of free-standing versus matrix-embedded oxide-passivated silicon nanocrystals: The role of matrix-induced strain

Kůsová

Ondič

Klimešová

et al. 2012

Applied Physics Letters

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On the method of photoluminescence spectral intensity ratio imaging of silicon bricks: Advances and limitations J. Appl. Phys. 112, 063116 (2012) Measurement of net dopant concentration via dynamic photoluminescence J. Appl. Phys. 112, 063704 (2012) Luminescence and deep-level transient spectroscopy of grown dislocation-rich Si layers AIP Advances 2, 032152 (2012) The role of excess minority carriers in light induced degradation examined by photoluminescence imaging J. Appl. Phys. 112, 033703 (2012) Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method

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Nanosized silicon particles by inert gas arc evaporation

Cited by 14 publications

References 13 publications

Optical properties of Si and Ge nanocrystals: Parameter‐free calculations

Optical properties of Si and Ge nanocrystals: Parameter‐free calculations

Electronic excitations in Si and Ge nanocrystals: Parameterfree calculations

Luminescence of free-standing versus matrix-embedded oxide-passivated silicon nanocrystals: The role of matrix-induced strain

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