2014
DOI: 10.1016/j.tsf.2014.10.061
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Nanostructuration and band gap emission enhancement of ZnO film via electrochemical anodization

Abstract: A C C E P T E D M A N U S C R I P T ACCEPTED MANUSCRIPT2 We report fabrication of nanostructured zinc oxide (ZnO) thin films with improved optical properties through electrochemical anodization. The ZnO films were produced over silicon substrates via radio-frequency (RF) plasma magnetron sputtering technique followed by electrochemical treatment in potassium sulfate solution. After electrochemical treatment, the effect of applied potential on the band gap emission behavior of ZnO films was investigated for the… Show more

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Cited by 20 publications
(9 citation statements)
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“…With a direct band gap and high exciton binding energy values of 3.3 eV and 60 meV, respectively, the transparent n-type semiconductor zinc oxide (ZnO) has demonstrated use for numerous electronic, electrochemical, optoelectronic, and electromechanical devices [1,2,3,4], including light-emitting diodes [5], piezoelectric nanogenerators [6], field emission devices [7], high-performance nanosensors [8,9], solar cells [10,11], and ultraviolet (UV) lasers [12]. Due to their high surface-to-volume ratio and surface area, the ZnO nanostructures with zero- (quantum dots and ultrafine nanoparticles), one- (tubes, rods, belts, and wires), or two-dimensional morphology (sheets, flakes, and thin films) offer superior performance attributes than those of bulk ZnO structures.…”
Section: Introductionmentioning
confidence: 99%
“…With a direct band gap and high exciton binding energy values of 3.3 eV and 60 meV, respectively, the transparent n-type semiconductor zinc oxide (ZnO) has demonstrated use for numerous electronic, electrochemical, optoelectronic, and electromechanical devices [1,2,3,4], including light-emitting diodes [5], piezoelectric nanogenerators [6], field emission devices [7], high-performance nanosensors [8,9], solar cells [10,11], and ultraviolet (UV) lasers [12]. Due to their high surface-to-volume ratio and surface area, the ZnO nanostructures with zero- (quantum dots and ultrafine nanoparticles), one- (tubes, rods, belts, and wires), or two-dimensional morphology (sheets, flakes, and thin films) offer superior performance attributes than those of bulk ZnO structures.…”
Section: Introductionmentioning
confidence: 99%
“…ZnO, with a wide band gap (3.37 eV) and large exciton binding energy (60 meV) [10][11][12][13], has found a wide range of possible applications in photocatalysis [14], photovoltaics [15], lightemitting diodes [16], sensing [17] and many others [18].…”
Section: Introductionmentioning
confidence: 99%
“…In addition, it has a high electrochemical coupling coefficient [7], thermal stability [1,6], high photostability [7], low-cost [11], low toxicity [7,12,13] and biodegradability [14]. All these properties make zinc oxide a promising material for several applications, including catalysis [5], photocatalysis [2,3,6,12], photovoltaics [3], solar cells [2,5,6,11,12,[15][16][17][18], photoelectrochemical (PEC) water splitting for hydrogen generation [11,17], ultraviolet (UV) light-emitting diodes [2,3,6,15,18], ultraviolet lasers [6,12], sensing [2,3,5,6,11,12,14], and so on.…”
Section: Introductionmentioning
confidence: 99%
“…Until now, several effective methods to prepare ZnO nanostructures have been used: hydrothermal methods [2,[4][5][6]11,14,15], thermal evaporation [6], chemical vapour deposition (CVD) [2,[4][5][6]14,20], pulsed laser deposition (PLD) [2,14], molecular beam epitaxy (MBE) [2,6], template-assisted methods [2,15], metal organic chemical vapor deposition (MOCVD) [6], atomic layer deposition (ALD) [5], sol-gel chemistry [5,11], ultra-fast microwave method [15], sputtering [4,11] and electrochemical methods [2,3,5,6,14]. Most of the aforementioned strategies required high temperature growth environment [20], costly experimental setups [2,20], long reaction times [2,20] and complicated procedures [2].…”
Section: Introductionmentioning
confidence: 99%