Visible and UV light are demonstrated to significantly enhance the sensing properties of an n‐type porous silicon (PS) extrinsic semiconductor interface to which TiO2 and titanium oxynitride (TiO2‐xNx) photocatalytic nanostructures are fractionally deposited. The acid/base chemistry of NH3, a moderately strong base, and NO2, a moderately strong acid, couples to the majority charge carriers of the doped semiconductor as the strong acid (TiO2) enhances the extraction of electrons from NH3, and the more basic TiO2‐xNx decreases the efficiency of electron extraction relative to the untreated interface. In contrast, NO2 and a TiO2 or TiO2‐xNx nanostructure‐decorated PS interface compete for the available electrons leading to a distinct time dependent electron transduction dynamics as a function of TiO2 and TiO2‐xNx concentration. Only small concentrations of TiO2 and its oxynitride and no self‐assembly are required to enhance the response of the decorated interface. With light intensities of less than a few lumens/cm2‐sterad‐nm, responses are enhanced by up to 150% through interaction with visible (and UV) radiation. These light intensities should be compared to the sun's radiation level, ≈500 lumens/cm2‐sterad‐nm suggesting the possibility of solar pumped sensors. The observed behavior in these systems is largely explained by the recently developed Inverse Hard/Soft Acid/Base (IHSAB) concept.