2011
DOI: 10.1002/cphc.201100712
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Nanostructure‐Driven Analyte–Interface Electron Transduction: A General Approach to Sensor and Microreactor Design

Abstract: A concept describing the nanostructure-directed dynamics of acid/base interaction and the balance between physisorption and chemisorption on an extrinsic semiconductor interface is evaluated and compared for n- and p-type semiconductors. The inverse hard/soft acid/base (IHSAB) concept, as it complements the HSAB concept, defines the nature of a dominant physisorption behavior and enables the creation of a matrix of controllable interactions. The technology results in the coupling of Lewis acid/base chemistry w… Show more

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Cited by 27 publications
(123 citation statements)
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“…By depositing metal oxide nanostructure islands to the PS interface, shown schematically in Figure 1, the response of the sensor can be enhanced or diminished [32]. The Inverse Hard/Soft Acid/ Base (IHSAB) model, explains this phenomenon by linking chemical selectivity and the balance of electron transduction and chemisorption [5,[31][32][33] with the sensor response mechanisms.…”
Section: Inverse Hard/soft Acid/base Conceptmentioning
confidence: 99%
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“…By depositing metal oxide nanostructure islands to the PS interface, shown schematically in Figure 1, the response of the sensor can be enhanced or diminished [32]. The Inverse Hard/Soft Acid/ Base (IHSAB) model, explains this phenomenon by linking chemical selectivity and the balance of electron transduction and chemisorption [5,[31][32][33] with the sensor response mechanisms.…”
Section: Inverse Hard/soft Acid/base Conceptmentioning
confidence: 99%
“…The Inverse Hard/Soft Acid/ Base (IHSAB) model, explains this phenomenon by linking chemical selectivity and the balance of electron transduction and chemisorption [5,[31][32][33] with the sensor response mechanisms. The IHSAB model predicts the interaction of acidic, basic, and amphoteric gas analytes with the nanostructure treated PS sensor interfaces.…”
Section: Inverse Hard/soft Acid/base Conceptmentioning
confidence: 99%
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“…This initial study makes use of the Co(II)Cl 2 Á6H 2 O complex 10 so as to deposit Co(II) in the pores of a porous a) silicon matrix 5,11 and 10 nm iron oxide nanoparticles so as to deposit Fe(II) in the pores of the porous silicon (PS) matrix. 5,11 In this study, we make use of the fact that an analyte can donate electrons to a "p-type" PS semiconductor surface and these electrons combine with holes, thus reducing the number of majority charge carriers. This leads to an increased resistance.…”
Section: Introductionmentioning
confidence: 99%