“…For example, the formation of a wide class of nanostructures on the surface of indium phosphide, gallium arsenide, and gallium phosphide is observed in a wide range of etching regimes [27,28]. The surfaces of ZnO, ZnSe, ZnTe and others are quite stable for many electrolytes [29,30]. On the other hand, А 2 В 6 semiconductors have good chemical inertness concerning air and moisture.…”