2021 IEEE 11th International Conference Nanomaterials: Applications &Amp; Properties (NAP) 2021
DOI: 10.1109/nap51885.2021.9568629
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Nanostructure Formation on ZnSe Crystal Surface by Electrochemical Etching

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Cited by 4 publications
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“…For example, the formation of a wide class of nanostructures on the surface of indium phosphide, gallium arsenide, and gallium phosphide is observed in a wide range of etching regimes [27,28]. The surfaces of ZnO, ZnSe, ZnTe and others are quite stable for many electrolytes [29,30]. On the other hand, А 2 В 6 semiconductors have good chemical inertness concerning air and moisture.…”
Section: Sem Analysismentioning
confidence: 99%
“…For example, the formation of a wide class of nanostructures on the surface of indium phosphide, gallium arsenide, and gallium phosphide is observed in a wide range of etching regimes [27,28]. The surfaces of ZnO, ZnSe, ZnTe and others are quite stable for many electrolytes [29,30]. On the other hand, А 2 В 6 semiconductors have good chemical inertness concerning air and moisture.…”
Section: Sem Analysismentioning
confidence: 99%