Nanostructure of GaAs0.88Sb0.10N0.02/InP quantum wells grown by metalorganic chemical vapor deposition on InP

MOVPE growth of antimonide-containing alloy materials for long wavelength applications

“…TEM micrographs of (a) a superlattice [22] consisting of four periods of alternating GaAs and GaAs 1Ày Sb y (y ¼ 0.43) layers on a GaAs substrate. (b) Multiquantum wells of GaAs 0.88 Sb 0.10 N 0.02 /InP exhibit uniform layer thickness with sharp interfaces [51].…”

“…On the contrary, the GaAs-on-GaAs 1Ày Sb y interface is rough, presumably due to the segregation of Sb to the surface of the growing film. A dilute nitride GaAs 1ÀyÀz Sb y N z layer and a quantum well structure based on this material, both grown on InP, were also studied [51]. Fig.…”