Nanostructure, optical and electrical response of gamma ray radiated PdS/p-Si heterojunction

Ali, Syed Mansoor; AlGarawi, M. S.; Khan, Salah Ud‐Din; Aldawood, S.

doi:10.1016/j.mssp.2020.105474

Cited by 4 publications

(2 citation statements)

References 41 publications

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“…Eqs. ( 4) and ( 5) are used to fit the curve and ln(I/T 2 ) verse V presented linear, which coincides with the transport characteristics in the thermal emission model [33,34] , as shown in Figs. 5(d)-5(h).…”

Section: Resultsmentioning

confidence: 60%

Controllable growth of wafer-scale PdS and PdS₂ nanofilms via chemical vapor deposition combined with an electron beam evaporation technique

Gao,

Zhou,

Hao

et al. 2023

J. Semicond.

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Palladium (Pd)-based sulfides have triggered extensive interest due to their unique properties and potential applications in the fields of electronics and optoelectronics. However, the synthesis of large-scale uniform PdS and PdS2 nanofilms (NFs) remains an enormous challenge. In this work, 2-inch wafer-scale PdS and PdS2 NFs with excellent stability can be controllably prepared via chemical vapor deposition combined with electron beam evaporation technique. The thickness of the pre-deposited Pd film and the sulfurization temperature are critical for the precise synthesis of PdS and PdS2 NFs. A corresponding growth mechanism has been proposed based on our experimental results and Gibbs free energy calculations. The electrical transport properties of PdS and PdS2 NFs were explored by conductive atomic force microscopy. Our findings have achieved the controllable growth of PdS and PdS2 NFs, which may provide a pathway to facilitate PdS and PdS2 based applications for next-generation high performance optoelectronic devices.

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Section: Resultsmentioning

confidence: 60%

Controllable growth of wafer-scale PdS and PdS₂ nanofilms via chemical vapor deposition combined with an electron beam evaporation technique

Gao,

Zhou,

Hao

et al. 2023

J. Semicond.

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show abstract

“…Metal oxide semiconductors, particularly, are wellknown for their attractive magnetic, electrical, and optical characteristics [1][2][3][4][5]. Furthermore, these physical characteristics of metal oxide semiconductors, structural, optical, electrical, etc., are significantly altered upon exposure to ionizing radiation, particularly gamma radiation [6][7][8][9][10]. Herein, it is noteworthy to mention that gamma radiation excessively influences the addressed characteristics.…”

Section: Introductionmentioning

confidence: 99%

Study of The Structural, Optical, and Morphological Properties of Sno2 Nanofilms under the Influence of Gamma Rays

Alramadany,

Rejah

2023

IJP

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This study reports the fabrication of tin oxide (SnO2) thin films using pulsed laser deposition (PLD). The effect of 60Co (300, 900, and 1200 Gy) gamma radiation on the structural, morphological, and optical features is systematically demonstrated using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), and ultraviolet-visible light analysis (UV-Vis), respectively In XRD tests, the size of the crystallites decreased from 45.5 to 40.8 nm for the control samples and from 1200 Gy to 60Co for the irradiated samples. Using FESEM analysis, the particle diameter revealed a similar trend to that attained using XRD; in particular, the average diameters were 93.8 and 79.9 nm for the samples mentioned above. A similar profile was observed for the AFM analysis in which an increase in the radiation dose from 300 to 1200 Gy resulted in a decrease in the RMS values from 74.6 to 32.25 nm. Contrariwise, the calculated optical band gap demonstrated an increasing profile where optical band gaps of 3.08 and 3.18 eV were acquired for control and samples irradiated with 900 Gy. However, the attained optical band gap was further increased to 3.24 eV due to the 60Co gamma radiation increment to 1200 Gy.

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Modification of CsPbBr3/p-Si Heterojunction Properties using Gamma Ray Irradiation

Aldawood,

Ali,

Qaid

et al. 2023

Silicon

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Nanostructure, optical and electrical response of gamma ray radiated PdS/p-Si heterojunction

Cited by 4 publications

References 41 publications

Controllable growth of wafer-scale PdS and PdS₂ nanofilms via chemical vapor deposition combined with an electron beam evaporation technique

Controllable growth of wafer-scale PdS and PdS₂ nanofilms via chemical vapor deposition combined with an electron beam evaporation technique

Study of The Structural, Optical, and Morphological Properties of Sno2 Nanofilms under the Influence of Gamma Rays

Modification of CsPbBr3/p-Si Heterojunction Properties using Gamma Ray Irradiation

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Nanostructure, optical and electrical response of gamma ray radiated PdS/p-Si heterojunction

Cited by 4 publications

References 41 publications

Controllable growth of wafer-scale PdS and PdS2 nanofilms via chemical vapor deposition combined with an electron beam evaporation technique

Controllable growth of wafer-scale PdS and PdS2 nanofilms via chemical vapor deposition combined with an electron beam evaporation technique

Study of The Structural, Optical, and Morphological Properties of Sno2 Nanofilms under the Influence of Gamma Rays

Modification of CsPbBr3/p-Si Heterojunction Properties using Gamma Ray Irradiation

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Controllable growth of wafer-scale PdS and PdS₂ nanofilms via chemical vapor deposition combined with an electron beam evaporation technique

Controllable growth of wafer-scale PdS and PdS₂ nanofilms via chemical vapor deposition combined with an electron beam evaporation technique