Nanostructured Electronics and Optoelectronic Materials

Tsu, Raphael; Zhang, Qi

doi:10.1016/b978-081551534-0.50016-6

Cited by 3 publications

(5 citation statements)

References 111 publications

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“…For example: Porous silicon emits light with peak at 1.9-2.5eV, attributed partially to quantum size effects and more directly to Si-O complex such as the siloxine. [2] And amorphous silicon emits light from 1.4-2eV, attributed to the elimination of the ∆ -point minimum with disorder; clusters of Si in an oxide matrix emit light from 2.1-2.5eV, [3] and finally, the Si-O superlattice mentioned above, emits light with a peak at 2-2.2 eV extending to 3eV in EL spectrum. [4] It was established that not only oxygen is the source of optical activities, further annealing in an oxygen atmosphere increases the light emission by at least ten-fold.…”

Section: Si -Sio 2 Superlatticesmentioning

confidence: 98%

“…What about Si clusters in an oxide or nitride matrix where the number of such clusters can be made very large with very small cluster sizes? [3] Because annealing is needed to boost the luminescence, the low PL efficiency from these schemes is caused by the strain-induced and bonding defects leading to non-radiative recombinations. It is difficult to define these non-radiative channels in terms of local strains.…”

Section: Introductionmentioning

confidence: 99%

“…Fig.2PL of silicon clusters in SiO 2 matrix taken from[3]. Red shift results from (a) -(c) with increase Si in oxide matrix.…”

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confidence: 99%

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Optical Properties of Silicon - SiO2 Superlattice

Tsu

Daneshvar²

2007

ECS Trans.

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Silicon, having an indirect optical transition, results in optoelectronic devices with very low efficiency. Although porous silicon shows PL, thought to be primarily due to quantum confinement, and superlattice structures have demonstrated stable photoluminescence, PL and electroluminescence, EL, it is argued that the common denominator may be due to oxygen complexes, rather than quantum size effects. All schemes employing quantum confinement to break the momentum conservation require annealing for reasonable efficiency. The Si -SiO 2 superlattices do not represent the answer to the search of optical activities in silicon based materials; rather, provide the basis for the type of structures in searching for the proper Si-based superlattices. The main stumbling block seems to be the usual defects induced by high local strain, leading to nonradiative channels. Thus breakthrough is still waiting to be discovered.

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Section: Si -Sio 2 Superlatticesmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

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Optical Properties of Silicon - SiO2 Superlattice

Tsu

Daneshvar²

2007

ECS Trans.

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“…[2] Both PL and EL emissions with peaks ~2eV extending from 1.3-3eV were observed in a nine period device, which has been life tested for over one year at an applied voltage of 6-8V. [3] The optical transition at the fundamental bandgap of 1.1eV requires phonon assistance, which is at least 3 orders of magnitude weaker. One often hears the argument that if all the defects were eliminated, the weak indirect optical transition in silicon would dominate over the non-radiative channels.…”

mentioning

confidence: 99%

“…We know in several systems, fairly strong optical transition is possible. For example: Porous silicon emits light with peak at 1.9-2.5eV, attributed to quantum size effects and Si-O complex such as the siloxine; amorphous silicon emits light from 1.4-2eV, attributed to the elimination of the ∆ -point minimum with disorder; clusters of Si in an oxide matrix emit light from 2.1-2.5eV, [3] and finally, the Si-O superlattice mentioned above, emits light with a peak at 2-2.2 eV extending to 3eV in EL spectrum. In this work, it was established that not only oxygen is the source of optical activities, further annealing in an oxygen atmosphere increase the light emission by at least ten-fold.…”

mentioning

confidence: 99%