“…Recently, resistance random access memory (RRAM), one of the most promising candidates in emerging memory technologies, has attracted much attention by the silicon microelectronics industry due to several advantages: fast switching response and high scalability in per-bit energy consumption, excellent endurance, and retention during switching operations. − Furthermore, the simple two-terminal design of “metal/solid-electrolyte/metal” is also applied to a 3D stackable high-density data storage architecture . These features make it possible to employ the RRAM for many potential applications, such as computing-in-memory, data storage, and memory logic units. , Different metal oxide materials, including TiO x , , WO x , , NiO, , CuO, Ta 2 O 5 , ZrO, , etc., have extensively been investigated as the solid electrolyte based on the mechanisms of resistive switching (RS) in memory devices.…”