“…[7,30] The RF sputtering technique was selected because of its potential to produce low-cost, uniform, and good quality films with tailored stoichiometry. [31] The quality of the deposited films depend on various deposition parameters. The experimental conditions of thin-film preparation were: (i) sample: MoO 3 (Sigma-Aldrich, purity 99.99%), (ii) substrate: glass substrate, (iii) chamber base pressure: ≈10 −6 mbar, (iv) background argon pressure: 0.03 mbar, (v) magnetron power supply frequency: 13.56 MHz, (vi) RF power: 150 W, (vii) deposition time: 30 min, (viii) substrate-target distance: 5 cm, (ix) post-deposition annealing temperature and time: 400 °C, 1 h. The commercially available MoO 3 powder was ground in an agate mortar with a pestle and was used as the sputtering target.…”