2003
DOI: 10.1063/1.1579124
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Nanostructured silicon formations as a result of ionized N2 gas reactions on silicon with native oxide layers

Abstract: Nanostructured silicon was formed by means of the ionized N 2 gas reaction on SiO 2 /Si, and the electronic structure, surface morphology, and optical properties were investigated. The physicochemically modified thin layers were resolved to SiN y and SiO x N y through the observation of Si 2p, O 1s, and N 1s core-level spectra in x-ray photoelectron spectroscopy. The formations of SiO x N y and SiO 2 nanostructures ͑3-4 nm in size͒, performed by the etching process followed by adsorption of ionized nitrogen, w… Show more

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Cited by 6 publications
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