ZnO/Fe 2 O 3 heterojunction were prepared by sequentially depositing iron oxide α-Fe 2 O 3 and zinc oxide ZnO films on FTO (SnO 2 :F) substrates. The α-Fe 2 O 3 and ZnO films and the α-Fe 2 O 3 / ZnO heterojunction were characterized by Field Emission Scanning Electron Microscopy (FESEM), Energy-Dispersive X-ray spectroscopy (EDX), and X-Ray Diffraction (XRD). Pure crystalline ZnO films were hydrothermally deposited on α-Fe 2 O 3 films and the process parameters were as follows: hydrothermal time, 4h; temperature 150°C. Finally, the device was transferred to an electric oven and heated at a constant temperature of 90°C for 5h, to develop the ZnO nanostructure. The photocurrent measurements showed an increase of the intrinsic surface states or defects at the α-Fe 2 O 3 /ZnO interface. The photoelectrochemical performance of the α-Fe 2 O 3 /ZnO heterojunction was examined by chronoamperometry and linear sweep voltammeter techniques. It was found that the α-Fe 2 O 3 /ZnO structure exhibits a higher photoelectrochemical activity when compared to α-Fe 2 O 3 thin films. The highest photocurrent density was obtained for α-Fe 2 O 3 /ZnO films in 1 M NaOH electrolyte. This high photoactivity was attributed to the high active surface area and to the external applied bias, which favors the transfer and the separation of the photogenerated charge carriers in α-Fe 2 O 3 /ZnO heterojunction devices.