Nanostructured Ti thin films by magnetron sputtering at oblique angles

Álvarez, Rafael; García-Martín, José Miguel; García-Valenzuela, Aurelio; Macías-Montero, Manuel; Ferrer, F. J.; Santiso, José; Rico, Víctor J.; Cotrino, José; González‐Elipe, Agustín R.; Palmero, Alberto

doi:10.1088/0022-3727/49/4/045303

Cited by 63 publications

(92 citation statements)

References 33 publications

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“…It was previously shown that the GLAD films morphology is scale-invariant with a power-law scaling connecting thickness and columns' width in xand y-directions [31]. Surface self-diffusion, atomic mobility, ballistic character of incoming particles, or dragging phenomenon are quite a few mechanisms which significantly influence the column broadening and tilting vs. film thickness, and thus, the final structural morphology and anisotropy [32]. Despite several growth simulations in agreement with experimental data and predicting column angle and broadening, the structural anisotropy of GLAD films still remains strongly dependent on operating conditions and experimental methods (cf.…”

Section: Of 18mentioning

confidence: 99%

Influence of Thickness and Sputtering Pressure on Electrical Resistivity and Elastic Wave Propagation in Oriented Columnar Tungsten Thin Films

et al. 2020

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Tungsten films were prepared by DC magnetron sputtering using glancing angle deposition with a constant deposition angle α = 80°. A first series of films was obtained at a constant pressure of 4.0 × 10−3 mbar with the films’ thickness increasing from 50 to 1000 nm. A second series was produced with a constant thickness of 400 nm, whereas the pressure was gradually changed from 2.5 × 10−3 to 15 × 10−3 mbar. The A15 β phase exhibiting a poor crystallinity was favored at high pressure and for the thinner films, whereas the bcc α phase prevailed at low pressure and for the thicker ones. The tilt angle of the columnar microstructure and fanning of their cross-section were tuned as a function of the pressure and film thickness. Electrical resistivity and surface elastic wave velocity exhibited the highest anisotropic behaviors for the thickest films and the lowest pressure. These asymmetric electrical and elastic properties were directly connected to the anisotropic structural characteristics of tungsten films. They became particularly significant for thicknesses higher than 450 nm and when sputtered particles were mainly ballistic (low pressures). Electronic transport properties, as well as elastic wave propagation, are discussed considering the porous architecture changes vs. film thickness and pressure.

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Section: Of 18mentioning

confidence: 99%

Influence of Thickness and Sputtering Pressure on Electrical Resistivity and Elastic Wave Propagation in Oriented Columnar Tungsten Thin Films

et al. 2020

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“…Most studies on films produced with obliquely incident vapor flux have concerned metals and oxides [4], which were primarily synthesized at low temperature and low deposited energy (typically by thermal and electron beam evaporation) to benefit from exacerbated shadowing effects [6]. Combining oblique angle geometries and sputter-deposition technique provides additional degree of freedom to adjust the film morphological features (porosity and column tilt angle) and stoichiometry by varying the deposition pressure or target power [7][8][9][10][11] and employing more than one material source [12][13][14][15]. However, studies on transition metal nitride (TMN) films produced at OAD or GLAD conditions remain relatively underexplored [16][17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Texture and Stress Evolution in HfN Films Sputter-Deposited at Oblique Angles

et al. 2019

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In this study, polycrystalline hafnium nitride (HfN) thin films were grown by oblique angle deposition (OAD) technique to investigate the relationship between column tilt angle, texture development and residual stress evolution with varying inclination angle α of the substrate. The films (~1 μm thickness) were grown at various angles (α = 5°, 25°, 35°, 65°, 75°, and 85°) with respect to the substrate normal by reactive magnetron sputtering at 0.3 Pa and 300 °C. The film morphology, crystal structure and residual stress state were characterized by scanning electron microscopy and X-ray diffraction (XRD), including pole figure and sin2ψ measurements. All HfN films had a cubic, NaCl-type crystal structure with an [111] out-of-plane orientation and exhibited a biaxial texture for α ≥ 35°. XRD pole figures reveal that the crystal habit of the grains consists of {100} facets constituting triangular-base pyramids, with a side and a corner facing the projection of the incoming particle flux (indicative of a double in-plane alignment). A columnar microstructure was formed for α ≥ 35°, with typical column widths of 100 nm. It is observed that the column tilt angle β increases monotonously for α ≥ 35°, reaching β = 34° at α = 85°. This variation at microscopic scale is correlated with the tilt angle of the (111) crystallographic planes, changing from −24.8 to 11.3° with respect to the substrate surface. The residual stress changes from strongly compressive (~−5 GPa at α = 5°) to negligible or slightly tensile for α ≥ 35°. The observed trends are compared to previous works of the literature and discussed based on existing crystal growth and stress models, as well as in light of energy and angular distribution of the incident particle flux calculated by Monte Carlo. Importantly, a decrease of the average kinetic energy of Hf particles from 22.4 to 17.7 eV is found with increasing α due to an increase number of collisions.

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“…The morphology of gold surface is the most significant feature that influences its functional properties. Gold nanostructures are often prepared by methods of electrochemical deposition [1] but there are a few reports on sputtered micro-/nano-structures [2]- [4]. ZnO doped by Al (ZnO:Al) belongs to transparent conductive oxide (TCO) thin films with specific electronic/optical properties which are applicable in solar cells, optoelectronics and sensorics.…”

Section: Introductionmentioning

confidence: 99%

Sputtered gold nanostructures

Szabó

Flickyngerová

Tvarožek

et al. 2014

2014 29th International Conference on Microelectronics Proceedings - MIEL 2014

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The forming of Au nanostructures on Corning glass substrates and transparent conductive oxide ZnO:Al thin films by the RF diode sequential sputtering is presented. Morphology of Au structures was analysed by scanning electron microscopy with the free ImageJ software and optical transparency was evaluate by UV-Vis spectrometry. Sputtering power density (deposition rate) and nominal Au thickness caused changes of size and nearest neighbour distance of Au nanostructures as well as it lowered the optical transparency.

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Nanostructured Ti thin films by magnetron sputtering at oblique angles

Cited by 63 publications

References 33 publications

Influence of Thickness and Sputtering Pressure on Electrical Resistivity and Elastic Wave Propagation in Oriented Columnar Tungsten Thin Films

Influence of Thickness and Sputtering Pressure on Electrical Resistivity and Elastic Wave Propagation in Oriented Columnar Tungsten Thin Films

Texture and Stress Evolution in HfN Films Sputter-Deposited at Oblique Angles

Sputtered gold nanostructures

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