Nanostructured TiO2 thin film memristor using hydrothermal process

Dongale, Tukaram D.; Shinde, S.S.; Kamat, Rajanish K.; Rajpure, K.Y.

doi:10.1016/j.jallcom.2014.01.093

Cited by 73 publications

(43 citation statements)

References 23 publications

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“…The memristive device is a broader class of nonlinear circuit element which can be identified by a pinched hysteresis loop in current–voltage ( I – V ) plane . Figure a,b represents the I – V characteristics of the Ag/Melanin/SS device on the linear and semi‐log scale, respectively.…”

Section: Resultsmentioning

confidence: 99%

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

Gurme

Dongale

Surwase

et al. 2018

Physica Status Solidi (a)

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A Ag/melanin/SS memristive device with remarkably good endurance and retention properties is demonstrated using natural melanin isolated from bacterium Aeromonas sp. SNS. Purified and characterized melanin is used for the development of a non‐volatile memory device. The device is operated under electroforming‐free mode and requires only ±0.6 V resistive switching voltage. 2 × 104 switching cycles endurance is achieved with an approximately 10X memory window at 0.2 V read voltage. In addition to this, the low resistance state (LRS) and high resistance state (HRS) are stable over 103 s without any observable degradation in the resistance states. Standard deviation and coefficient of variation of LRS and HRS are very small compared to other memory devices reported in the literature. Furthermore, the Ag/melanin/SS memristive device shows rich nonlinear behavior and possesses negative differential resistance effect during positive bias. Charge transportation in the device is due to the ohmic and space charge limited current. The formation and breaking of the conductive filament are responsible for the bipolar resistive switching effect due to hybrid electronic‐ionic charge transportation. Rich I–V characteristics, very low switching voltage, and remarkable nonvolatile memory performance make melanin a strong candidate for next generation organic non‐volatile memory devices.

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Section: Resultsmentioning

confidence: 99%

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

Gurme

Dongale

Surwase

et al. 2018

Physica Status Solidi (a)

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“…The external voltage is applied between the top (Ag) and bottom (FTO) electrodes with the latter being grounded for I-V measurement. The external voltage is swept in the cycle of 0 V-þ0.88 V-0 V-À 0.88 V-0 V [21]. The memristor device shows resistive switching from Low Resistance State (LRS) to High Resistance State (HRS) for the voltage range 0 V to À0.88 V. This typical property is known as a RESET condition of memristor device.…”

Section: Memristor Device Performancementioning

confidence: 99%

“…The memristor device shows resistive switching from Low Resistance State (LRS) to High Resistance State (HRS) for the voltage range 0 V to À0.88 V. This typical property is known as a RESET condition of memristor device. During the positive external voltage, the device switches from High Resistance State (HRS) to Low Resistance State (LRS) for the voltage range 0 V to þ0.88 V. This typical property is known as a SET condition of memristor device [2,21]. The pinched hysteresis loop (I-V curve) is quasi-linear and symmetric which due to fact that contact between the active layer and top and bottom metal layer becomes ohmic [29].…”

Section: Memristor Device Performancementioning

confidence: 99%

“…Dongale et al reported the TiO 2 thin film memristor using the cost effective hydrothermal route. The developed memristor device shows the symmetric bipolar resistive switching behavior within the low operating voltage (70.7 V) range [21]. Yusoff et al reported the fabrication of ZnO thin film memristor using electrodeposition and thermal oxidation method.…”

Section: Introductionmentioning

confidence: 99%

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Development of Ag/ZnO/FTO thin film memristor using aqueous chemical route

Dongale

Khot

Mali

et al. 2015

Materials Science in Semiconductor Processing

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“…Ning et al [9] proposed the nonvolatile threshold adaptive transistors model with embedded RRAM for neuromorphic application. Dongale et al [10] reported the TiO 2 thin film memristor with the low symmetric voltage switching. Hoessbacher et al [11] reported a novel application of memristor in the plasmonic domain.…”

Section: Introductionmentioning

confidence: 99%

Effect of write voltage and frequency on the reliability aspects of memristor-based RRAM

et al. 2017

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In this paper, we report the effect of the write voltage and frequency on memristor-based resistive random access memory (RRAM). The above-said parameters have been investigated on the linear drift model of the memristor. With a variation of write voltage from 0.2 to 1.2 V and a subsequent frequency modulation from 1, 2, 4, 10, 100 and 200 Hz, the corresponding effects on memory window, low resistance state (LRS) and high resistance state (HRS) have been reported. Thus, the lifetime (s) reliability analysis of memristor-based RRAM is carried out using the above results. It is found that the HRS is independent of the write voltage, whereas LRS shows dependency on write voltage and frequency. The simulation results showcase the fact that the memristor possesses higher memory window and lifetime (s) in the higher voltage with lower frequency region, which has been attributed to less data losses in the memory architecture.

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Nanostructured TiO2 thin film memristor using hydrothermal process

Cited by 73 publications

References 23 publications

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

Development of Ag/ZnO/FTO thin film memristor using aqueous chemical route

Effect of write voltage and frequency on the reliability aspects of memristor-based RRAM

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