Nanostructured V2O5/MoO3 Based Devices for Brain Inspired Optical Memory Applications

B, Sharmila; Dwivedi, Priyanka

doi:10.1109/tnano.2024.3409151

IEEE Trans. Nanotechnology

2024

DOI: 10.1109/tnano.2024.3409151

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Nanostructured V₂O₅/MoO₃ Based Devices for Brain Inspired Optical Memory Applications

Sharmila B,

Priyanka Dwivedi

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Achieving Entire Seven Fundamental Boolean Logic Operations in a Two-Terminal Li-Based Memristor

Feng,

Hu,

Yin

et al. 2024

ACS Appl. Electron. Mater.

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Conventional logic operations transmitting data between processing and the memory unit inevitably result in a "memory wall" and energy consumption dilemmas. The memristor provides an alternative solution at the device level by integrating logic operations and memory functions, however, a combination of multistage operations in memristors is required to achieve fundamental Boolean logic calculations, especially for XOR/XNOR. In this work, we implement the XOR/XNOR through leveraging bifunctional oxygen-containing Ti thin films as both current collectors and Li-reservoirs in a two-terminal Li-based memristor, i.e., ITO/Nb 2 O 5 /LiCoO 2 /Ti. When Li-ions are inserted into oxygen-containing Ti under reversed voltage and partially reduce the high-valence Ti, the subsequent postsynaptic current exceeds the threshold, thereby realizing the XOR/XNOR logic operations. Therefore, the entire seven fundamental Boolean logic operations can be achieved in an individual device, featuring biological-like synaptic plasticity without redundant circuit design. Through electrochemical modulation of pulse parameters, the artificial synapse demonstrates versatile types of short-term potentiation, encompassing pair-pulse facilitation, spike-voltagedependent plasticity, and spike-rate-dependent-plasticity (SRDP). The SRDP displays properties analogous to a high-pass filter as discernible distinction of current response within and beyond the frequency of 1 Hz. Furthermore, the Physiological functions of Ebbinghaus' memory curves and Pavlov's classical conditioning experiment are emulated on this single memristor based on the principles of long-term potentiation.

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Achieving Entire Seven Fundamental Boolean Logic Operations in a Two-Terminal Li-Based Memristor

Feng,

Hu,

Yin

et al. 2024

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

show abstract

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Nanostructured V₂O₅/MoO₃ Based Devices for Brain Inspired Optical Memory Applications

Cited by 1 publication

References 40 publications

Achieving Entire Seven Fundamental Boolean Logic Operations in a Two-Terminal Li-Based Memristor

Achieving Entire Seven Fundamental Boolean Logic Operations in a Two-Terminal Li-Based Memristor

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