Nanostructured ZnO films for potential use in LPG gas sensors

Latyshev, Vitalii; Berestok, Taisiia; Opanasyuk, A. S.; Kornyushchenko, A. S.; Perekrestov, V. I.

doi:10.1016/j.solidstatesciences.2017.02.010

Cited by 36 publications

(10 citation statements)

References 30 publications

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“…Zinc oxide (ZnO) is a promising n-type semiconductor material that is used in a wide range of applications, such as gas detection [1,2,3,4], dye-sensitized solar cells [5,6,7], antibacterial surface coatings [8], light-emitting diodes (LEDs) [9,10], nanopower generators [11], ultraviolet (UV) detection [12,13,14,15], and photocatalytic applications [16,17,18]. ZnO nanostructures have a direct wide band gap (3.37 eV) [19], chemical stability [20], optical [21], piezoelectric [22,23,24], and electrical [25] properties.…”

Section: Introductionmentioning

confidence: 99%

Effect of GO Additive in ZnO/rGO Nanocomposites with Enhanced Photosensitivity and Photocatalytic Activity

et al. 2019

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Zinc oxide/reduced graphene oxide nanocomposites (ZnO/rGO) are synthesized via a simple one-pot solvothermal technique. The nanoparticle–nanorod turnability was achieved with the increase in GO additive, which was necessary to control the defect formation. The optimal defect in ZnO/rGO not only increased ZnO/rGO surface and carrier concentration, but also provided the alternative carrier pathway assisted with rGO sheet for electron–hole separation and prolonging carrier recombination. These properties are ideal for photodetection and photocatalytic applications. For photosensing properties, ZnO/rGO shows the improvement of photosensitivity compared with pristine ZnO from 1.51 (ZnO) to 3.94 (ZnO/rGO (20%)). Additionally, applying bending strain on ZnO/rGO enhances its photosensitivity even further, as high as 124% at r = 12.5 mm, due to improved surface area and induced negative piezoelectric charge from piezoelectric effect. Moreover, the photocatalytic activity with methylene blue (MB) was studied. It was observed that the rate of MB degradation was higher in presence of ZnO/rGO than pristine ZnO. Therefore, ZnO/rGO became a promising materials for different applications.

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Section: Introductionmentioning

confidence: 99%

Effect of GO Additive in ZnO/rGO Nanocomposites with Enhanced Photosensitivity and Photocatalytic Activity

et al. 2019

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“…The morphologies and optoelectronic properties of ZnO nanostructures and ZnO films are controlled by adjusting their preparation conditions [ 8 – 27 ]. The crystallinities and morphologies of ZnO-based films have been the focus of many studies [ 9 , 11 , 12 , 15 , 16 , 19 , 21 , 23 – 25 ], as these properties play important roles in device applications. Most ZnO films, including those grown by PLD [ 12 ], molecular beam epitaxy (MBE) [ 24 ], MOCVD [ 25 ], and MS [ 13 , 21 , 22 ], have shown “particle-like” surface morphologies.…”

Section: Introductionmentioning

confidence: 99%

Tuning the Surface Morphologies and Properties of ZnO Films by the Design of Interfacial Layer

Wang

Zhou

et al. 2017

Nanoscale Res Lett

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Wurtzite ZnO films were grown on MgO(111) substrates by plasma-assisted molecular beam epitaxy (MBE). Different initial growth conditions were designed to monitor the film quality. All the grown ZnO films show highly (0001)-oriented textures without in-plane rotation, as illustrated by in situ reflection high-energy electron diffraction (RHEED) and ex situ X-ray diffraction (XRD). As demonstrated by atomic force microscopy (AFM) images, “ridge-like” and “particle-like” surface morphologies are observed for the ZnO films grown in a molecular O2 atmosphere with and without an initial deposition of Zn adatoms, respectively, before ZnO growth with oxygen plasma. This artificially designed interfacial layer deeply influences the final surface morphology and optical properties of the ZnO film. From room-temperature photoluminescence (PL) measurements, a strong defect-related green luminescence band appears for the ZnO film with a “particle-like” morphology but was hardly observed in the films with flat “ridge-like” surface morphologies. Our work suggests that the ZnO crystallinity can be improved and defect luminescence can be reduced by designing interfacial layers between substrates and epilayers.Electronic supplementary materialThe online version of this article (10.1186/s11671-017-2301-8) contains supplementary material, which is available to authorized users.

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“…ZnO thin films attract considerable attention of researchers as a promising material for solar energy, gas sensors and other applications [1][2][3][4][5][6][7]. In the classical case, zinc oxide is a wide band gap semiconductor with high exciton binding energy of 60 meV [8].…”

Section: Introductionmentioning

confidence: 99%

“…It is known that optical properties of semiconductor thin films depend on the deposition method [9,10]. Currently, various methods are used to obtain ZnO thin films: radio frequency (RF) or direct current sputtering, spray pyrolysis, spin coating, metal organic chemical vapor deposition and pulsed laser deposition [5][6][7][9][10][11][12][13][14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Optical and Dispersion Parameters of the Al-doped ZnO Thin Film

Kashuba¹,

Andriyevsky²,

Ільчук³

et al. 2021

J. Nano- Electron. Phys.

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The results of studies of the dispersion of optical functions and optical constants for zinc oxide thin film doped with aluminum are presented. The deposition of Al-doped ZnO (2.5 wt. %) thin films is performed by magnetron sputtering. Al-doped ZnO thin film crystallizes in a hexagonal structure (structure type ZnO, space group P63mc (No. 186) with unit-cell dimensions a  3.226(2) Å and c  5.155(6) Å (V 46.49(6) Å 3 ). Optical transmittance spectra (300-2500 nm) shows that the Al-doped ZnO thin film is of high optical quality, and the value of the optical band gap (3.26 eV) is very close to undoped samples. The study of optical functions is performed on the basis of the experimentally measured transmission spectrum using the bypass method. The spectral behavior of optical functions, such as refractive index, extinction coefficient, absorption index, dielectric functions and optical conductivity, is established. The value of Urbach energy and the dependence of oscillator strength on the size of the band gap and the concentration of doping element are determined. It is observed an increase in Urbach energy for the Al-doped ZnO thin film in comparison to the undoped ones. An almost twofold increase in the optical oscillator strength value is revealed for the thin film studied. The influence of aluminum doping on the dynamic change of optical mobility, optical resistance and relaxation time is established for the first time for the studied compound. The value of the plasma frequency is also determined and its correlation with the carrier density is defined. The doping of ZnO thin films with aluminum leads to an increase in optical mobility, relaxation time and plasma frequency that is revealed by comparison with reference data for the undoped ZnO. Due to good optical properties, this thin film is a good candidate as a material for optoelectronic devices.

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Nanostructured ZnO films for potential use in LPG gas sensors

Cited by 36 publications

References 30 publications

Effect of GO Additive in ZnO/rGO Nanocomposites with Enhanced Photosensitivity and Photocatalytic Activity

Effect of GO Additive in ZnO/rGO Nanocomposites with Enhanced Photosensitivity and Photocatalytic Activity

Tuning the Surface Morphologies and Properties of ZnO Films by the Design of Interfacial Layer

Optical and Dispersion Parameters of the Al-doped ZnO Thin Film

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