Nanostructuring of crystalline grains of natural diamond using ionizing radiation

Poklonski, N. A.; Lapchuk, T. M.; Горбачук, Н. И.; Nikolaenko, V. A.; Bachuchin, I. V.

doi:10.1134/1.2010681

Cited by 8 publications

(4 citation statements)

References 8 publications

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“…Note that, in the virgin (not irradiated with neutrons) grains of natural diamond, the CW-ESR signal was not observed at room temperature [88]. It was shown there that irradiation of natural diamond grains with neutrons (with fluence F ≈ 1 × 10 21 cm −2 above critical level of radiation damage) led to the appearance of an intense CW-ESR signal from metastable paramagnetic centers with paramagnetic relaxation times > 10 −5 s. The possible reason for this signal appearance in irradiated diamond is the metastable non-compensated spins located on the inner surface of nanopores (clusters of vacancies in diamond crystal matrix).…”

Section: Magnetic Properties Of Diamonds Irradiated With Fast Neutronsmentioning

confidence: 98%

“…It was shown there that irradiation of natural diamond grains with neutrons (with fluence F ≈ 1 × 10 21 cm −2 above critical level of radiation damage) led to the appearance of an intense CW-ESR signal from metastable paramagnetic centers with paramagnetic relaxation times > 10 −5 s. The possible reason for this signal appearance in irradiated diamond is the metastable non-compensated spins located on the inner surface of nanopores (clusters of vacancies in diamond crystal matrix). Note that, in the virgin (not irradiated with neutrons) grains of natural diamond, the CW-ESR signal was not observed at room temperature [88]. It was shown there that irradiation of natural diamond grains with neutrons (with fluence F ≈ 1 × 10 21 cm −2 above critical level of radiation damage) led to the appearance of an intense CW-ESR signal from metastable paramagnetic centers with paramagnetic relaxation times >10 −5 s. The possible reason for this signal appearance in irradiated diamond is the metastable noncompensated spins located on the inner surface of nanopores (clusters of vacancies in diamond crystal matrix).…”

Section: Magnetic Properties Of Diamonds Irradiated With Fast Neutronsmentioning

confidence: 98%

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Magnetic and Optical Properties of Natural Diamonds with Subcritical Radiation Damage Induced by Fast Neutrons

et al. 2023

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Raman spectroscopy and magnetic properties of the natural single crystalline diamonds irradiated with high fluences of fast reactor neutrons have been investigated. Raman spectra transformations were studied in the range from moderate levels up to radiation damage leading to diamond graphitization. The selection of fast neutrons irradiated diamonds for magnetic measurements was carried out according to Raman scattering data on the basis of the intensity criterion and the spectral position of the “1640” band. It was found that in natural diamonds irradiated with neutrons with an extremely high subcritical fluence F = 5 × 1020 cm−2, the transition from a diamagnetic to a ferromagnetic state is observed at the Curie–Weiss temperature of ≈150 K. The energy of the exchange magnetic interaction of uncompensated spins is estimated to be ≈1.7 meV. The differential magnetic susceptibility estimated from the measurements of magnetic moment for temperature 2 K in the limit of B ≈ 0 is χdiff ≈ 1.8 × 10−3 SI units. The nature of magnetism in radiation-disordered single-crystal hydrogen- and metal-free natural diamond grains was discussed.

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Section: Magnetic Properties Of Diamonds Irradiated With Fast Neutronsmentioning

confidence: 98%

Section: Magnetic Properties Of Diamonds Irradiated With Fast Neutronsmentioning

confidence: 98%

Magnetic and Optical Properties of Natural Diamonds with Subcritical Radiation Damage Induced by Fast Neutrons

et al. 2023

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“…Unpackaged Schottky diodes Mo/n-Si (epitaxial 5.5 μm thick layer and resistivity of 1 Ohm•cm) produced by JSC "Integral" were studied [8]. Diodes were fabricated on wafers of monocrystalline silicon of n-type electrical conductivity doped with antimony and grown by the Czochralski method.…”

Section: Studied Structuresmentioning

confidence: 99%

Inductive Type Impedance of Mo/<i>n</i>-Si Barrier Structures Irradiated with Alpha Particles

Poklonski

Ковалев

Usenko

et al. 2023

Prib. metody izmer.

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In silicon microelectronics, flat metal spirals are formed to create an integrated inductance. However, the maximum specific inductance of such spirals at low frequencies is limited to a value of the order of tens of microhenries per square centimeter. Gyrators, devices based on operational amplifiers with approximately the same specific inductance as spirals, are also used. Despite the fact that such solutions have been introduced into the production of integrated circuits, the task of searching for new elements with high values of specific inductance is relevant. An alternative to coils and gyrators can be the effect of negative differential capacitance (i.e., inductive type impedance), which is observed in barrier structures based on silicon.The purpose of the work is to study the low-frequency impedance of Schottky diodes (Mo/n-Si) containing defects induced by α-particles irradiation and determination of the parameters of these defects by methods of low-frequency impedance spectroscopy and DLTS (Deep Level Transient Spectroscopy).Unpackaged Schottky diodes Mo/n-Si (epitaxial layer of 5.5 μm thickness and resistivity of 1 Ohm∙cm) produced by JSC “Integral” are studied. Inductance measurements were carried out on the as manufactured diodes and on the diodes irradiated with alpha particles (the maximum kinetic energy of an αparticle is 5.147 MeV). The impedance of inductive type of the Schottky diodes at the corresponding DC forward current of 10 µA were measured in the AC frequency range from 20 Hz to 2 MHz. DLTS spectra were used to determine the parameters of radiation-induced defects. It is shown that irradiation of diodes with alpha particles produces three types of radiation-induced defects: A-centers with thermal activation energy of E1 ≈ 190 meV, divacancies with activation energies of E2 ≈ 230 meV and E3 ≈ 410 meV, and Ecenters with activation energy of E4 ≈ 440 meV measured relative to the bottom of c-band of silicon.

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“…The extraordinary thermal conductivity of diamonds in conjunction with their wide band gap and low electron affinity makes them promising for applications in highpower and high-temperature optoelectronic devices [336,337]. Neutron irradiation leads to formation of sp 2 bonded regions [338,339] and nanosized pores [340] in sp 3 diamond matrix. The migration energies for various types of defects in diamond are considerably higher than for defects in silicon [341].…”

Section: Zero-dimensional (Point) Defects In Diamond Matrixmentioning

confidence: 99%

Synergy of physical properties of low-dimensional carbon-based systems for nanoscale device design

Poklonski¹,

Вырко²,

Siahlo³

et al. 2019

Mater. Res. Express

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We review the principles of formation, physical properties, and current or envisaged applications for a wide range of carbon allotropic forms. We discuss experimental and theoretical advances relating to staple zero-, one-, and two-dimensional carbon structures, such as fullerenes, carbon nanotubes, and graphene. In addition we emphasize research on emerging carbon allotropes (carbon nanoscrolls, funnels, etc) that result from combining or deforming allotropic forms with well-defined dimensionality. Such materials fall in-between clearly delineated dimensional categories and consequently exhibit unique characteristics that are promising for electronic, optical, and mechanical applications. We also consider other approaches to tuning properties of carbon-based materials, such as chemical functionalization, intentional introduction of structural disorder, and placement of guest atoms or molecules inside hollow structures. Finally, we discuss the properties of and experimental methods for studying zero-dimensional systems (paramagnetic nitrogen impurity atoms) in diamond matrix. The review emphasizes the interplay between the various material properties of carbon-based nanostructures and the designs for nanoscale devices that rely on synergistic combinations of these properties. For example, an electromechanical vibrator, a strain sensor, a nanodynamometer, and a nanoelectromechanical memory cell that we describe exploit both electronic and nanomechanical properties of low-dimensional carbon structures, a reed switch and a magnetic field sensor use magnetic and nanomechanical properties, a maser based on nitrogen-doped diamond uses thermal and optoelectronic properties, etc. All presented device concepts have been validated by calculations, and some have been implemented experimentally.

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Nanostructuring of crystalline grains of natural diamond using ionizing radiation

Cited by 8 publications

References 8 publications

Magnetic and Optical Properties of Natural Diamonds with Subcritical Radiation Damage Induced by Fast Neutrons

Magnetic and Optical Properties of Natural Diamonds with Subcritical Radiation Damage Induced by Fast Neutrons

Inductive Type Impedance of Mo/<i>n</i>-Si Barrier Structures Irradiated with Alpha Particles

Synergy of physical properties of low-dimensional carbon-based systems for nanoscale device design

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