2013
DOI: 10.1116/1.4820019
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Nanostructuring of free-standing, dielectric membranes using electron-beam lithography

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Cited by 7 publications
(7 citation statements)
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“…The thickness of the chrome layer needs to be adjusted so that it is thick enough to act as a protective layer during the entire etching process. An alternative way to create hole patterns in silicon nitride membranes is described in [23]. An image of the atom sieve can be seen in Fig.…”
Section: Atom-sieve Fabricationmentioning
confidence: 99%
“…The thickness of the chrome layer needs to be adjusted so that it is thick enough to act as a protective layer during the entire etching process. An alternative way to create hole patterns in silicon nitride membranes is described in [23]. An image of the atom sieve can be seen in Fig.…”
Section: Atom-sieve Fabricationmentioning
confidence: 99%
“…The process can be divided into graphic design, direct writing on a layer of photoresist, development, fixing, and subsequent material transfer. [137,138] EBL can achieve arbitrary graphic direct writing under a computer-controlled framework; thus, this approach is a promising candidate for making photomasks in industrial applications. [139,140] Moreover, spot size, electron scattering, secondary-electron range, resist development, and mechanical stability of the resist are important factors that influence the EBL resolution.…”
Section: Electronic Beammentioning
confidence: 99%
“…The fabrication procedure is described in detail in Ref. 26. It is worth mentioning that the process was optimized slightly to ensure that the holes were etched through the SiN x completely, using 15 SCCM CF 4 for 21 min at 10 mTorr and 100 W for the final etch step.…”
Section: Fig 1 Experimental Setupmentioning
confidence: 99%