2004
DOI: 10.1063/1.1756695
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Nanostructuring of silicon (100) using electron beam rapid thermal annealing

Abstract: Effect of crystal orientation on self-assembled silicon nanostructures formed by electron-beam annealing J. Appl. Phys. 97, 094301 (2005); 10.1063/1.1877819Incorporation of manganese into semiconducting ScN using radio frequency molecular beam epitaxy A technique for the rapid, uncomplicated and lithography free fabrication of silicon nanostructures on both n-type and p-type Si͑100͒ substrates is presented. The nanofabrication method employs electron beam rapid thermal annealing of Si͑100͒ substrates which hav… Show more

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Cited by 43 publications
(33 citation statements)
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“…Details of the fabrication procedure and mechanism for nanostructure growth have been reported elsewhere. 20 A characteristic AFM image of the nanostructured Si substrate surface is shown in Fig. 2.…”
Section: Methodsmentioning
confidence: 99%
“…Details of the fabrication procedure and mechanism for nanostructure growth have been reported elsewhere. 20 A characteristic AFM image of the nanostructured Si substrate surface is shown in Fig. 2.…”
Section: Methodsmentioning
confidence: 99%
“…Si nanostructures generated by the fast out-diffusion of Pb atoms during annealing creating a highly disturbed Si surface on which Si nanostructures form during the electron beam bombardment similar to the processes described in Refs [1][2][3]. The normalised plot of depth profiles of Pb shown in Fig.…”
Section: Resultsmentioning
confidence: 96%
“…Figure 2a shows an AFM image of the silicon surface following the first electron beam annealing step (1000°C for 15 s). As demonstrated by Johnson et al, 6 this rapid annealing treatment results in self-assembly of silicon nanostructures across the entire surface. Using these annealing conditions, the nanostructures are typically 4 nm to 15 nm high at a density of 10/lm 2 to 15/lm 2 across the surface.…”
Section: Methodsmentioning
confidence: 91%
“…Other than clearance of loose surface debris no other surface cleaning treatments were performed. The first step of the process was the creation of silicon surface nanostructures following the procedure of Johnson et al 6 Briefly, annealing of the samples was performed using an electron beam annealing system, at 1000°C for 15 s. The rate of heating or cooling in the annealing cycle was set at 5°C/s. An electron beam, with energy of 20 keV, was raster-scanned (at frequencies of 1 kHz and 10 kHz in orthogonal directions) over the sample surface with a beam current typically up to 4 mA.…”
Section: Methodsmentioning
confidence: 99%
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