Nanostructuring the Er–Yb distribution to improve the photoluminescence response of thin films

Suárez-Garcı́a, A.; Serna, Rosalía; Castro, Miguel Delibes de; Afonso, Carmen N.; Vickridge, I.

doi:10.1063/1.1664034

Cited by 44 publications

(26 citation statements)

References 16 publications

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“…8 A glass host with maximum phonon energy of 880 cm −1 , corresponding to the exchange of five phonons, is expected to be suited for high luminescence quantum efficiency. 4,6,8 In the case of amorphous Al 2 O 3 a phonon energy spectrum has been reported with maximum phonon energy value of 870 cm −1 , 10 which is consistent with the clear observation of the 1480 nm emission in Fig. 2.…”

Section: +supporting

confidence: 74%

“…9 In our previous works we have shown that alternate pulsed laser deposition ͑PLD͒ from the host ͑Al 2 O 3 ͒ and dopant rare earth ͑RE͒ targets can be used to obtain artificial structures in which the RE concentration and ion distribution are controlled. 10,11 An ArF excimer laser ͓ = 193 nm, = 20 ns full width at half maximum ͑FWHM͒, 2 J cm −2 ͔ was used to ablate independently the Al 2 O 3 and RE targets. The films were designed to have a 300 nm total thickness.…”

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confidence: 99%

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Broadband infrared emission from Er–Tm:Al2O3 thin films

Xiao¹,

Serna²,

Afonso³

et al. 2005

Applied Physics Letters

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Thin films of amorphous aluminum oxide (Al2O3) co-doped with Er3+ and Tm3+ have been synthesized by alternate pulsed laser deposition. When pumped at 794 nm a broad emission band over 1400–1700 nm is observed. Two peaks related to the 1540 nm band from Er3+ and to the 1640 nm band from Tm3+ are clearly distinguished. The photoluminescence intensity ratio of the 1640–1540 nm emissions has been controlled by modifying the Tm concentration. A spectrum with a fairly flat profile and a full width at half maximum of 230 nm is obtained for an Er concentration of 7.2×1019cm−3 and a [Tm]∕[Er] concentration ratio of 3. It is found that the Er3+ to Tm3+ energy transfer processes play an important role in the definition of the luminescent response. The large width of the emission band and the excellent optical and thermomechanical properties of the Er–Tm co-doped Al2O3 signal this system as a potential candidate for the development of broadband integrated optical amplifiers.

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Section: +supporting

confidence: 74%

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confidence: 99%

Broadband infrared emission from Er–Tm:Al2O3 thin films

Xiao¹,

Serna²,

Afonso³

et al. 2005

Applied Physics Letters

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“…However, the Er profile and separation can be controlled by using alternating targets. This has been investigated for Er-doped and Er-, Yb-co-doped alumina thin films using PLD [185][186][187][188]. One of the advantages of this technique is that the Er concentration can be tailored such that it is highest where the pump light intensity is highest, thus potentially improving the pumping efficiency.…”

Section: Waveguide Fabrication Methodsmentioning

confidence: 99%

Erbium‐doped integrated waveguide amplifiers and lasers

Bradley

Pollnau

2010

Laser & Photonics Reviews

325

161

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Erbium-doped fiber devices have been extraordinarily successful due to their broad optical gain around 1.5-1.6 μm. Er-doped fiber amplifiers enable efficient, stable amplification of high-speed, wavelength-division-multiplexed signals, thus continue to dominate as part of the backbone of longhaul telecommunications networks. At the same time, Er-doped fiber lasers see many applications in telecommunications as well as in biomedical and sensing environments. Over the last 20 years significant efforts have been made to bring these advantages to the chip level. Device integration decreases the overall size and cost and potentially allows for the combination of many functions on a single tiny chip. Besides technological issues connected to the shorter device lengths and correspondingly higher Er concentrations required for high gain, the choice of appropriate host material as well as many design issues come into play in such devices. In this contribution the important developments in the field of Er-doped integrated waveguide amplifiers and lasers are reviewed and current and future potential applications are explored. The vision of integrating such Er-doped gain devices with other, passive materials platforms, such as silicon photonics, is discussed.

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“…Extensive researches proved that Al 2 O 3 can enhance dispersion of Er 3+ , increasing luminescence efficiency and decay time, moreover, it has high chemical durability, thermal stability, and mechanical strength [6,7] . The Er 3+ doped Al 2 O 3 material has been successfully prepared by chemical vapor deposition [8] , ion implantation [9] , laser ablation deposition [10] , sol-gel method [11] , etc.…”

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confidence: 99%