Nanotwinning in CdS quantum dots

Kumar, Pragati; Saxena, Nupur; Singh, Fouran; Ágarwal, Avinash Kumar

doi:10.1016/j.physb.2012.04.029

Cited by 48 publications

(29 citation statements)

References 30 publications

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“…The absorption peaks at 622 cm -1 is assigned to Zn-S stretching [25]. The vibration absorption peaks observed at 861 and 772 cm -1 are assigned to Cd-S stretching [26]. In the present case, IR peaks are exhibited at 617 and 670 cm -1 for Cd 0.9 Zn 0.1 S nanoparticles which is related to Cd-Zn-S vibration.…”

Section: Fourier Transform Infrared (Ftir) Studiessupporting

confidence: 46%

Doping induced structural, band gap and photoluminescence properties of Cd0.9−xZn0.1CoxS nanoparticles

Devadoss¹,

Muthukumaran

2016

J Mater Sci: Mater Electron

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Co doped Cd 0.9 Zn 0.1 S (Co = 0-3 %) nanoparticles were prepared by a simple chemical co-precipitation method at room temperature. Optical and structural properties of the prepared samples have been studied using X-ray diffraction (XRD) and UV-visible spectrophotometer. XRD confirmed the cubic structure (phase singularity) of the samples and decline the secondary phase formation. Energy dispersive X-ray spectra showed the presence of Cd, Zn, Co and S in the appropriate proportion. Distortion produced by Co 2? in Cd-Zn-S made the lattice parameter of Co doped Cd 0.9-x Zn 0.1 S nanoparticles always higher than Cd 0.9 Zn 0.1 S. The reduced energy gap with Co substitution is mainly due to sp-d exchange interaction between the band electrons and the localized d electrons of the Co 2? ions substituting for host ions. The ultraviolet emission and visible band emission intensity and the modification in emission band position by Co-doping were discussed based on the size effect/change in structure and band gap. Based on the tailoring of energy gap and luminescence behavior, it can be concluded that Co-doped Cd 0.9-x Zn 0.1 S is a promising material for selective coatings for solar cells; use as antireflective coating materials, and for fabrication of optoelectronic devices.

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Section: Fourier Transform Infrared (Ftir) Studiessupporting

confidence: 46%

Doping induced structural, band gap and photoluminescence properties of Cd0.9−xZn0.1CoxS nanoparticles

Devadoss¹,

Muthukumaran

2016

J Mater Sci: Mater Electron

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“…The synthesis of CdS quantum dots in powder form is reported elsewhere [6]. For PLD, using ultraviolet laser source, a pulsed excimer KrF laser (Lambda Physik, Compex Pro 201, Coherent Inc., CA, USA) operating at 248-nm wavelength has been used.…”

Section: Methodsmentioning

confidence: 99%

Nanotwinning and structural phase transition in CdS quantum dots

et al. 2012

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Nanotwin structures are observed in high-resolution transmission electron microscopy studies of cubic phase CdS quantum dots in powder form by chemical co-precipitation method. The deposition of thin films of nanocrystalline CdS is carried out on silicon, glass, and TEM grids keeping the substrates at room temperature (RT) and 200°C by pulsed laser ablation. These films are then subjected to thermal annealing at different temperatures. Glancing angle X-ray diffraction results confirm structural phase transitions after thermal annealing of films deposited at RT and 200°C. The variation of average particle size and ratio of intensities in Raman peaks I2LO/I1LO with annealing temperature are studied. It is found that electron-phonon interaction is a function of temperature and particle size and is independent of the structure. Besides Raman modes LO, 2LO and 3LO of CdS at approximately 302, 603, and 903 cm−1 respectively, two extra Raman modes at approximately 390 and 690 cm−1 are studied for the first time. The green and orange emissions observed in photoluminescence are correlated with phase transition.

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“…Cadmium sulfide (CdS), an important II−VI semiconductor material, has a direct band gap of 2.45 eV at room temperature and is regarded as a possible optoelectronic material in the visible spectrum range678. Therefore, many researchers developed different techniques to control the shape and size of CdS nanostructures to improve the luminescence.…”

mentioning

confidence: 99%

Enhanced photoluminescence from CdS with SiO2 nanopillar arrays

Wang

et al. 2015

Sci Rep

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In this paper, the enhanced photoluminescence from CdS thin film with SiO2 nanopillar array (NPA) was demonstrated. The CdS was prepared using chemical bath deposition in a solution bath containing CdSO4, SC(NH2)2, and NH4OH. The SiO2 NPA was fabricated by the nanosphere lithography (NSL) techniques. The nanopillar is about 50 nm in diameter, and the height is 150 nm. As a result, the sample with NPA shows an obvious improvement of photoluminescence (PL), compared with the one without NPA. In addition, we also observed that the PL intensity is increased ~5 times if the active layer is deposited on the nanopillar arrays and covered by a thin metal film of Al. It is noteworthy that the enhancement of photoluminescence could be attributed to the roughness of the surface, the 2D photonic band gap (PBG) effect and the surface plasmon resonance (SPR) effects.

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Nanotwinning in CdS quantum dots

Cited by 48 publications

References 30 publications

Doping induced structural, band gap and photoluminescence properties of Cd0.9−xZn0.1CoxS nanoparticles

Doping induced structural, band gap and photoluminescence properties of Cd0.9−xZn0.1CoxS nanoparticles

Nanotwinning and structural phase transition in CdS quantum dots

Enhanced photoluminescence from CdS with SiO2 nanopillar arrays

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