Nanowire-based frequency-selective capacitive photodetector for resonant detection of infrared radiation at room temperature

Bandyopadhyay, S.

doi:10.1063/1.4887515

Cited by 6 publications

(2 citation statements)

References 20 publications

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“…5,6 As a result of tunability of capacitance, a shift in resonant peak frequency (in an LC circuit) is observed and accordingly a change in the power delivered to the load. The detectivity is reported to be 3 Â 10 7 Jones.…”

Section: Introductionmentioning

confidence: 96%

Nano-scale NiSi and n-type silicon based Schottky barrier diode as a near infra-red detector for room temperature operation

Roy¹,

Midya²,

Duttagupta³

et al. 2014

Journal of Applied Physics

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The fabrication of nano-scale NiSi/n-Si Schottky barrier diode by rapid thermal annealing process is reported. The characterization of the nano-scale NiSi film was performed using Micro-Raman Spectroscopy and X-ray Photoelectron Spectroscopy (XPS). The thickness of the film (27 nm) has been measured by cross-sectional Secondary Electron Microscopy and XPS based depth profile method. Current–voltage (I–V) characteristics show an excellent rectification ratio (ION/IOFF = 105) at a bias voltage of ±1 V. The diode ideality factor is 1.28. The barrier height was also determined independently based on I–V (0.62 eV) and high frequency capacitance–voltage technique (0.76 eV), and the correlation between them has explained. The diode photo-response was measured in the range of 1.35–2.5 μm under different reverse bias conditions (0.0–1.0 V). The response is observed to increase with increasing reverse bias. From the photo-responsivity study, the zero bias barrier height was determined to be 0.54 eV.

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Section: Introductionmentioning

confidence: 96%

Nano-scale NiSi and n-type silicon based Schottky barrier diode as a near infra-red detector for room temperature operation

Roy¹,

Midya²,

Duttagupta³

et al. 2014

Journal of Applied Physics

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“…The photodetection performance of the nanochannel structure at room temperature is further investigated using an RLC resonant circuit (see Supporting Information). The responsivity of the structure was found to be 677 mA/W at the resonance wavelength λ = 1028 nm (Figure e). With an effective area of the nanochannel structure sample A = 0.075 cm 2 , the specific detectivitiy at room temperature was 1.02 × 10 11 Jones.…”

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confidence: 99%

Spectrally Selective Photocapacitance Modulation in Plasmonic Nanochannels for Infrared Imaging

Huang

Delaunay

2016

Nano Lett.

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The optical response of subwavelength plasmonic structures can be used to monitor minute changes in their physical, chemical, and biological environments with high performance for sensing. The optical response in the far field is governed by the near-field properties of plasmon resonances. Sharp, tunable resonances can be obtained by controlling the shape of the structure and by using resonant cavities. However, microintegration of plasmonic structures on chips is difficult because of the readout in the far field. As such, structures that form an electrical microcircuit and directly monitor the near-field variation would be more desirable. Here, we report on an electronically readable photocapacitor based on a plasmonic nanochannel structure with high spectral resolution and a large modulation capability. The structure consists of metallic U-cavities and semiconductor channels, which are used to focus and confine light at the semiconductor-metal interfaces. At these interfaces, light is efficiently converted into photocarriers that change the electrical impedance of the structure. The capacitance modulation of the structure in response to light produces a light-to-dark contrast ratio larger than 10(3). A reflectance spectrum with a bandwidth of 16 nm and a 6% modulation depth is detected using a reactance variation of 3 kΩ with the same bandwidth. This photocapacitor design offers a practical means of monitoring changes induced by the near field and thus could be deployed in pixel arrays of image sensors for miniaturized spectroscopic applications.

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An Energy‐Efficient, BiFeO₃‐Coated Capacitive Switch with Integrated Memory and Demodulation Functions

You

Selvaraj

Zeng

et al. 2016

Adv Elect Materials

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A capacitive switching behavior is observed in a Si3N4/p‐Si‐based metal–insulator–semiconductor (MIS) structure due to the electron tunneling at the Si3N4/p‐Si interface. A BiFeO3 (BFO) layer is deposited on Si3N4/p‐Si by pulsed laser deposition technique to obtain the memcapacitive effect as the distribution of positive charges in the Si3N4 layer can be stabilized by the polarization charge of the ferroelectric BFO coating layer. The capacitive switching behavior of the Al/BFO/Si3N4/p‐Si/Au MIS structure is also sensitive to both intensity and wavelength of the illumination, which offers the possibility to create a photodetector for both intensity and color detection. Thus, the presented device has the potential application for future information storage and visible light communications. As an example, a photocapacitive demodulator with capability of decoding both wavelength and intensity information of the incident light is demonstrated.

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Nanowire-based frequency-selective capacitive photodetector for resonant detection of infrared radiation at room temperature

Cited by 6 publications

References 20 publications

Nano-scale NiSi and n-type silicon based Schottky barrier diode as a near infra-red detector for room temperature operation

Nano-scale NiSi and n-type silicon based Schottky barrier diode as a near infra-red detector for room temperature operation

Spectrally Selective Photocapacitance Modulation in Plasmonic Nanochannels for Infrared Imaging

An Energy‐Efficient, BiFeO₃‐Coated Capacitive Switch with Integrated Memory and Demodulation Functions

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Nanowire-based frequency-selective capacitive photodetector for resonant detection of infrared radiation at room temperature

Cited by 6 publications

References 20 publications

Nano-scale NiSi and n-type silicon based Schottky barrier diode as a near infra-red detector for room temperature operation

Nano-scale NiSi and n-type silicon based Schottky barrier diode as a near infra-red detector for room temperature operation

Spectrally Selective Photocapacitance Modulation in Plasmonic Nanochannels for Infrared Imaging

An Energy‐Efficient, BiFeO3‐Coated Capacitive Switch with Integrated Memory and Demodulation Functions

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An Energy‐Efficient, BiFeO₃‐Coated Capacitive Switch with Integrated Memory and Demodulation Functions