Nanowire Sensors in Cancer

Doucey, Marie‐Agnès; Carrara, Sandro

doi:10.1016/j.tibtech.2018.07.014

Cited by 90 publications

(62 citation statements)

References 112 publications

(155 reference statements)

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“…[295][296][297][298][299] By considering metal-oxide NWs, in 2017 Zhang et al [178] exploited the resistive switching properties of ZnO NWs for the realization of gas sensors with high selectivity and improved recovery speed. Recently, it was shown that the memristive properties of suspended Si NWs realized by a top down approach can be strongly modulated by the presence of biomolecules, making possible the realization of highly sensitive biosensors.…”

Section: Memsensorsmentioning

confidence: 99%

Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires

Milano

Porro

Valov

et al. 2019

Adv Elect Materials

116

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Memristive devices are considered one of the most promising candidates to overcome technological limitations for realizing next‐generation memories, logic applications, and neuromorphic systems in the modern nanoelectronics and information technology. Despite the continuous efforts, understanding the resistive switching mechanism underlying memristive/neuromorphic behavior still represents a challenge. Metal oxide nanowire‐based memristors appear suitable model systems for a deeper understanding of the involved physical/chemical phenomena due the possibility for localizing and investigating the switching mechanism. In practical aspects, nanowire‐based devices can be grown using a bottom‐up approach, thus being considered reliable candidates for going beyond the current scaling limitations of the top‐down approach by the standard lithography. In addition, taking into advantage of the high surface‐to‐volume ratio of these nanostructures, new device functionalities can be achieved by exploiting surface effects. In the literature, a variety of nanowire‐based devices such as single nanowires, nanowire arrays, and networks are reported to exhibit memristive behavior, explained by different switching mechanisms. This work provides a comparative review and a comprehensive analysis of device performances and physical phenomena responsible for memristive and neuromorphic behavior in such nanostructures. The analysis of the state‐of‐art of memristor devices based on nanowires and nanorods represent a milestone toward the development of nanowire‐based artificial neural networks.

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Section: Memsensorsmentioning

confidence: 99%

Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires

Milano

Porro

Valov

et al. 2019

Adv Elect Materials

116

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“…Such devices bring promises in order to have cost effective point of care (POC) and highly multiplexed sensors for personalised precision medicines [25] .…”

Section: Introductionmentioning

confidence: 99%

High Aspect Ratio Fin-Ion Sensitive Field Effect Transistor: Compromises toward Better Electrochemical Biosensing

et al. 2019

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The development of next generation medicines demand more sensitive and reliable label free sensing able to cope with increasing needs of multiplexing and shorter times to results. Field effect transistor-based biosensors emerge as one of the main possible technologies to cover the existing gap. The general trend for the sensors has been miniaturisation with the expectation of improving sensitivity and response time, but presenting issues with reproducibility and noise level. Here we propose a Fin-Field Effect Transistor (FinFET) with a high heigth to width aspect ratio for electrochemical biosensing solving the issue of nanosensors in terms of reproducibility and noise, while keeping the fast response time. We fabricated different devices and characterised their performance with their response to the pH changes that fitted to a Nernst-Poisson model. The experimental data were compared with simulations of devices with different aspect ratio, stablishing an advantage in total signal and linearity for the FinFETs with higher aspect ratio. In addition, these FinFETs promise the optimisation of reliability and efficiency in terms of limits of detection, for which the interplay of the size and geometry of the sensor with the diffusion of the analytes plays a pivotal role.

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“…As 1D nanoscale electron transport channels with a large surface‐to‐volume ratio, semiconductor nanowire FET transducers are highly sensitive in the detection of bioelectrical signals, such as biomolecular charges or cell membrane potentials. Several sensor configurations are commonly applied, such as FETs, memristors, and capture array nanowires, among which FETs have received extensive attention due to the analyte flexibility (miRNA, ctDNA, and drugs) . In an FET sensor, the perturbation of the electric potential at the nanowire surface associated with binding events of charged biomolecules (the sign and quantities of their charges depend on the isoelectric point of the biomolecules and the solution pH) leads to a change in the charge‐carrier density and conductance of nanowire FET devices in real time .…”

Section: Chemical/biological Sensorsmentioning

confidence: 99%

“…Several sensor configurations are commonly applied, such as FETs, memristors, and capture array nanowires, among which FETs have received extensive attention due to the analyte flexibility (miRNA, ctDNA, and drugs). 178 In an FET sensor, the perturbation of the electric potential at the nanowire surface associated with binding events of charged biomolecules (the sign and quantities of their charges depend on the isoelectric point of the biomolecules and the solution pH) leads to a change in the charge-carrier density and conductance of nanowire FET devices in real time. 179 Toward advantageous surfacebiological environment activity, the design of semiconductor nanowires via compositional and structural engineering is important.…”

Section: Nanowire Biological Sensorsmentioning

confidence: 99%

Compositional and structural engineering of inorganic nanowires toward advanced properties and applications

Sun

et al. 2019

InfoMat

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As natural one‐dimensional confined electron transport channels and photon propagation paths, nanowires (NWs) display unmatched properties and huge potential for application in diverse fields. The ability to construct a nanoscale functional system would enable significant advances in the currently desired miniaturized device integration. To date, the basic properties of all types of nanowire crystals, including metallic NWs, as well as group IV‐related, III‐V/II‐VI compounds, and metal oxide NWs, are well understood. Regarding future work, compositional (ie, doping and alloying) and structural (defect and heterostructure) designs to flexibly realize custom‐made functionality are emphasized. Along this line, recent progress is reviewed, including the basic properties (nanowire mechanics, electronics, and photonics) and applications such as photodetectors and chemical/biological sensors. A review of the correlations between the compositional/structural configuration of nanowires and the corresponding functionality is also presented. The future development direction of this field is concluded and highlighted at the end.

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Nanowire Sensors in Cancer

Cited by 90 publications

References 112 publications

Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires

Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires

High Aspect Ratio Fin-Ion Sensitive Field Effect Transistor: Compromises toward Better Electrochemical Biosensing

Compositional and structural engineering of inorganic nanowires toward advanced properties and applications

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