2010
DOI: 10.1063/1.3496457
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Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications

Abstract: We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a … Show more

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Cited by 74 publications
(69 citation statements)
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“…However, after over ten years of research, to date the system detection efficiency (SDE, which includes the efficiency of the optical coupling to the detector) of SNSPDs has been limited to ~ 20% 11,12 at 1550 nm wavelength (λ), due to the limited compatibility between the superconducting material used (typically, NbN) and the structures to enhance the SDE. Because the superconducting properties of NbN films depend on the crystal phase of the films 13 and are affected by crystal defects 14,15 , using NbN nanowires makes it challenging to meet the two requirements to achieve high-SDE SNSPDs: (1) the superconducting properties of nanowires and of bulk samples are similar, which ensures the correct operation of the detector; (2) the light is coupled to the detector and absorbed in the nanowires with high efficiency. The fragility of superconducting NbN with respect to structural disorder limits: (1) the fabrication yield of large-area devices 16 , (2) the choice of substrates for fabrication, and (3) the design parameters of optical structures that would enhance the absorption in the nanowires.…”
Section: Lettermentioning
confidence: 99%
“…However, after over ten years of research, to date the system detection efficiency (SDE, which includes the efficiency of the optical coupling to the detector) of SNSPDs has been limited to ~ 20% 11,12 at 1550 nm wavelength (λ), due to the limited compatibility between the superconducting material used (typically, NbN) and the structures to enhance the SDE. Because the superconducting properties of NbN films depend on the crystal phase of the films 13 and are affected by crystal defects 14,15 , using NbN nanowires makes it challenging to meet the two requirements to achieve high-SDE SNSPDs: (1) the superconducting properties of nanowires and of bulk samples are similar, which ensures the correct operation of the detector; (2) the light is coupled to the detector and absorbed in the nanowires with high efficiency. The fragility of superconducting NbN with respect to structural disorder limits: (1) the fabrication yield of large-area devices 16 , (2) the choice of substrates for fabrication, and (3) the design parameters of optical structures that would enhance the absorption in the nanowires.…”
Section: Lettermentioning
confidence: 99%
“…The NbN film is deposited by sputtering a Nb target in ArþN 2 mixture at total pressure P TOT ¼ 2.3 mTorr. The deposition is carried out at a nominal temperature of 400 C, with target current of 250 mA and target voltage of 380 V. These deposition conditions, similar to those previously used to fabricate highperformance meander-and waveguide-SSPDs, [22][23][24] allowed the realization of a film with critical temperature T c ¼ 9.67 K and transition width DT c ¼ 0.34 K. Then contact pads, consisting of 14 nm Ti and 140 nm Au layers, are defined through optical lithography, electron beam evaporation and lift off. In the final step, the nanowires are patterned from the NbN film by electron-beam lithography and reactive-ion etching in Ar/SF 6 plasma.…”
mentioning
confidence: 99%
“…By construction, IDE =´LDE(x)A(x)dx/´A(x)dx, where the integral arXiv:1504.05003v1 [cond-mat.supr-con] 20 Apr 2015 runs along the cross-section of the wire and A(x) represents the absorption probability density. We perform our experiments on a 100 nm long, 150 nm wide NbN bridge patterned from a 5 nm-thick NbN film sputtered on a GaAs substrate [31] (I c = 28 µA).…”
mentioning
confidence: 99%