Nanowire Template Assisted Epitaxy of Ultrawide Bandgap III-Nitrides on Si: Role of the Nanowire Template

Zhang, Qihua; Sivasundarampillai, Jenaes; Parimoo, Heemal; Zhao, Songrui

doi:10.1021/acsaom.3c00023

Cited by 3 publications

(1 citation statement)

References 77 publications

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“…The p-InGaN nanowire segment was grown at a substrate temperature of 620 °C with a thickness of around 200 nm. The substrate temperatures were calibrated using the Si(111) surface reconstruction during the heating up of the substrate. − Identical conditions were used for the growth of the p-InGaN nanowires without the TJ.…”

Section: Experimental and Methodsmentioning

confidence: 99%

Tunnel Junction Engineered Photocarrier Dynamics in Epitaxial Semiconductor Nanowires for Efficient and Ultrafast Photoelectrochemical Photodetectors

Fathabadi

Zhao

2023

ACS Photonics

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Photodetection using photoelectrochemical (PEC) principles is an emerging field in photonics. In recent years, using epitaxial III-nitride nanowires as photoelectrodes, high-performance PEC-type photodetectors (PDs) have been demonstrated, making the epitaxial III-nitride nanowires a scalable, high-performance PEC-PD architecture. Despite the progress, the photodetection performance improvement mainly occurs through incorporating photocatalysts into the nanowire photoelectrodes. In this study, we show that a semiconductor tunnel junction (TJ), which can be a natural component in the epitaxy process of semiconductor nanowires, can drastically improve the photodetection performance of such nanowire-based PEC-PDs. By using a three-electrode PEC cell configuration, we clearly show that an n++-GaN/InGaN/p++-GaN TJ can lead to a factor of 9× improvement on the responsivity of the InGaN nanowire photoelectrode in the blue band due to the TJ-induced photocarrier dynamics tuning, compared to the InGaN nanowire photoelectrode without the TJ. More drastically, the TJ also improves the photoresponse speed of the nanowire photoelectrode by 2 orders of magnitude, and for the electrode with the TJ an ultrafast response time of less than 10 ms is estimated. This TJ concept can also be applied to other TJ structures for other band photodetections. This study therefore sheds new light on further improving the performance of emerging epitaxial nanowire-based PEC-PDs for a wide range of applications from sensing to information processing.

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Section: Experimental and Methodsmentioning

confidence: 99%

Tunnel Junction Engineered Photocarrier Dynamics in Epitaxial Semiconductor Nanowires for Efficient and Ultrafast Photoelectrochemical Photodetectors

Fathabadi

Zhao

2023

ACS Photonics

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Polarity control and crystalline quality improvement of AlN thin films grown on Si(111) substrates by molecular beam epitaxy

Fan,

Yin,

Liu

et al. 2024

Journal of Applied Physics

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We attain N-polar and Al-polar AlN thin films on Si(111) substrates by plasma-assisted molecular beam epitaxy. The polarity of AlN epilayers has been validated by wet chemical etching using tetramethylammonium hydroxide and by the direct cross-sectional observation of atomic stacking under high-angle annular dark-field scanning transmission electron microscopy. For the 290 nm-thick as-grown N-polar AlN epilayer, x-ray diffraction (XRD) (002) and (102) ω rocking curve peak full width half maximums (FWHMs) are 475 and 1177 arcsec, and the surface mean square roughness (RMS) is 0.30 nm. We flipped the polarity using the metal-flux-modulation-epitaxy (MME) strategy. The MME strategy promotes anti-phase boundaries (APBs) on the {22¯01} crystalline planes instead of commonly observed lateral planar APBs in AlN epilayers. Merging of the tilted APBs at ∼50 nm leads to a complete Al-polar surface. For the 180 nm-thick Al-polar AlN epilayer, XRD (002) and (102) peak FWHMs are 1505 and 2380 arcsec, and the surface RMS is 1.41 nm. Strain analysis by XRD and Raman spectroscopy indicates a uniform tensile strain of 0.160% across the N-polar AlN epilayer surface and a strain distribution of 0.113%–1.16% through the epilayer. In contrast, the Al-polar AlN epilayer exhibits a much broader tensile strain distribution of 0.482%–2.406% along the growth direction, potentially due to the interaction of polarity inversion and strain relaxation.

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Polarity Control of High Crystalline Quality Aln Thin Films Grown on Si(111) Substrates by Molecular Beam Epitaxy

Fan,

Yin,

Liu

et al. 2024

Preprint

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Nanowire Template Assisted Epitaxy of Ultrawide Bandgap III-Nitrides on Si: Role of the Nanowire Template

Cited by 3 publications

References 77 publications

Tunnel Junction Engineered Photocarrier Dynamics in Epitaxial Semiconductor Nanowires for Efficient and Ultrafast Photoelectrochemical Photodetectors

Tunnel Junction Engineered Photocarrier Dynamics in Epitaxial Semiconductor Nanowires for Efficient and Ultrafast Photoelectrochemical Photodetectors

Polarity control and crystalline quality improvement of AlN thin films grown on Si(111) substrates by molecular beam epitaxy

Polarity Control of High Crystalline Quality Aln Thin Films Grown on Si(111) Substrates by Molecular Beam Epitaxy

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