2017
DOI: 10.1039/c7ra01972f
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Nanowire Y-junction formation during self-faceting on high-index GaAs substrates

Abstract: In this contribution, we report on the observation of high-order and bi-dimensional surface mechanisms that allows the self-assembling of an alternating array of straight and bifurcated nanowires.

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Cited by 5 publications
(4 citation statements)
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“…In Figure 1a we show an image taken by Atomic Force Microscopy of an array of GaAs nanowires around a Y-J, which was grown by using similar growth conditions as the reported in Ref. [30]. The model studied in the Asymmetric Wigner Molecules in Nanowire Y-junctions present work is based on the geometrical characteristics of this kind of Y-Js (Figure 1b).…”
Section: Introductionmentioning
confidence: 96%
See 1 more Smart Citation
“…In Figure 1a we show an image taken by Atomic Force Microscopy of an array of GaAs nanowires around a Y-J, which was grown by using similar growth conditions as the reported in Ref. [30]. The model studied in the Asymmetric Wigner Molecules in Nanowire Y-junctions present work is based on the geometrical characteristics of this kind of Y-Js (Figure 1b).…”
Section: Introductionmentioning
confidence: 96%
“…In contrast, the III-V compound semiconductor nanostructures grown by epitaxial techniques are much better suited for such integration [29]. Recently, our group has reported the direct self-assembly of GaAs nanowires (NWs) and Y-Js by Molecular Beam Epitaxy via energetically unstable high-index substrates [30], then providing a valuable path toward the fabrication of III-V NWs/Y-Js networks. In Figure 1a we show an image taken by Atomic Force Microscopy of an array of GaAs nanowires around a Y-J, which was grown by using similar growth conditions as the reported in Ref.…”
Section: Introductionmentioning
confidence: 99%
“…In contrast, the III–V compound semiconductor nanostructures grown by epitaxial techniques are much better suited for such integration 29 . Recently, our group has reported the direct self-assembly of GaAs nanowires (NWs) and Y-Js by Molecular Beam Epitaxy via energetically unstable high-index substrates 30 , then providing a valuable path toward the fabrication of III–V NWs/Y-Js networks. In Fig.…”
Section: Introductionmentioning
confidence: 99%
“…1 a, we show an image taken by Atomic Force Microscopy of an array of GaAs nanowires around a Y-J, which was grown by using similar growth conditions as the reported in Ref. 30 . The model studied in the present work is based on the geometrical characteristics of this kind of Y-Js (Fig.…”
Section: Introductionmentioning
confidence: 99%