Narrow band gap high conducting nc-Si1-xGex:H absorber layers for tandem structure nc-Si solar cells

Vertical van der Waals Heterostructure of Single Layer InSe and SiGe

“…In its bulk form, SiGe was reported to be a good candidate for biosensor applications . The experimentally realized SiGe alloy was reported as an appropriate material for solar cell applications . Recent studies have shown that Ge atoms can be incorporated into Si-based nanostructures with negligibly small induced strains. , The exchange of Si and Ge atoms in Si-based or Ge-based nanostructures may allow the possible experimental realization of the 2D form of SiGe.…”

Highly Microcrystalline Phosphorous‐Doped Si:H Very Thin Films Deposited by RF‐PECVD

“…[5] Some strong candidates for such purpose are silicon and germanium-based semiconductor materials which can be deposited in their amorphous or microcrystalline phase by PECVD at temperatures well under 350 °C. [6][7][8] Our work will focus on exploring the growth process as well as the structural and electrical properties of ntype (P-doped) μc-Si:H. Undoped μc-Si:H deposited by PECVD typically exhibits an amorphous incubation layer that can span up to 100 nm before nucleation of the crystalline phase. [9] Previous work conducted by other research groups on SiGebased P-I-N sensors has shown that the n-and p-type layers typically have a thickness of the order of a few tens of nanometers.…”

Studies on the Impedance Characteristics, Dielectric Relaxation, and ac Conductivity in Silicon Oxycarbide (SiOxCy:H) Films at the Amorphous-to-Nanocrystalline Transition Zone

“…5 The utilization of a broad spectrum of solar energy typically requires a wide band gap window layer to permit its extensive portion to reach the absorber layers of the solar cells at maximum intensities 6−8 and also a narrow band gap absorber layer to consume the infrared part of the solar spectrum. 9,10 In the past, several studies were carried out on the nanocrystalline silicon oxide and silicon carbide thin films, which were found promising for their wide band gaps and good conductivities via involving Si nanocrystals (Si-ncs). 11,12 Apart from this, nanocrystalline silicon oxy-carbide (nc-Si/a-SiO x C y or nc-SiO x C y ) films, in which silicon nanocrystals (Si-ncs) are embedded in the amorphous silicon oxy-carbide (a-SiO x C y ) matrix, are also an attractive material for the window layer of Si solar cells.…”

“…In this regard, a thin-film silicon solar cell is a great choice where the few thin layers of Si and its composite material are used to make an efficient solar cell at a low cost . The utilization of a broad spectrum of solar energy typically requires a wide band gap window layer to permit its extensive portion to reach the absorber layers of the solar cells at maximum intensities − and also a narrow band gap absorber layer to consume the infrared part of the solar spectrum. , In the past, several studies were carried out on the nanocrystalline silicon oxide and silicon carbide thin films, which were found promising for their wide band gaps and good conductivities via involving Si nanocrystals (Si-ncs). , Apart from this, nanocrystalline silicon oxy-carbide (nc-Si/a-SiO x C y or nc-SiO x C y ) films, in which silicon nanocrystals (Si-ncs) are embedded in the amorphous silicon oxy-carbide (a-SiO x C y ) matrix, are also an attractive material for the window layer of Si solar cells . The barrier height of a-SiC (2.5 eV) being significantly lower than a-SiO (9 eV), the SiO x C y matrix, with an intermediate barrier height, could allow an easy flow of electrons. , On the other hand, the oxygen in the matrix helps form Si-ncs in the amorphous matrix via thermodynamically optimum phase separation and high stability of the amorphous phase.…”