Narrow‐Gap and Gapless Semiconductors under Uniaxial Stress. Energy Spectrum and Galvanomagnetic Phenomena

Германенко, А. В.; Minkov, G. M.

doi:10.1002/pssb.2221840102

Cited by 33 publications

(12 citation statements)

References 53 publications

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“…Discrepancies between the two values occur when bulk carriers contribute to the Hall effect, via thermal excitation. Epitaxial strains can modify the band structure and they can also modify the activation energies of defects giving rise to unintentional doping [25]. Here, the films under compressive stresses, like the unstrained films [9], showed thermally activated transport behavior.…”

Section: Experimental Methodsmentioning

confidence: 87%

Surface states of strained thin films of the Dirac semimetal Cd3As2

Goyal

Kim

Schumann

et al. 2019

Phys. Rev. Materials

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We report on the growth and transport properties of strained thin films of the three-dimensional Dirac semimetal Cd 3 As 2. Epitaxial heterostructures, consisting of (112)-oriented Cd 3 As 2 films, are grown on nearly lattice matched (Ga 1-x In x)Sb buffer layers on (111) GaAs substrates by molecular beam epitaxy. The epitaxial coherency strain breaks the fourfold rotational symmetry, which protects the bulk Dirac nodes in Cd 3 As 2. All strained films exhibit the quantum Hall effect with most carriers residing in the two-dimensional states, irrespective of the sign of the biaxial stress. The Hall mobility monotonically increases as the biaxial stress is changed from compressive towards tensile. Furthermore, pronounced anisotropy is seen in the transport properties. The results show that the quantum Hall effect, which is quite similar to that of unstrained (112)oriented films, is independent of the presence of bulk Dirac nodes. Its appearance is consistent with the topological surface states that are a characteristic of the topological Z 2 invariant.

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Section: Experimental Methodsmentioning

confidence: 87%

Surface states of strained thin films of the Dirac semimetal Cd3As2

Goyal

Kim

Schumann

et al. 2019

Phys. Rev. Materials

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“…We turn now to the case of a heavily doped graphene, when ψ > t ≫ 1 and it is convenient to introduce a weak 3neq (1,2), nt=0 = 2neq, (3,4) and nt=0 = 0.5neq (5,6) for coupling parameters g =0.25 (1,3,5) and g =0.5 (2,4,6). Dotted curves correspond to exponential fits (19), with α =0.…”

Section: B Heavily-doped Graphenementioning

confidence: 99%

Generation and recombination processes via acoustic phonons in disordered graphene

Vasko

Mitin

2011

Phys. Rev. B

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Generation-recombination interband transitions via acoustic phonons are allowed in a disordered graphene because of violation of the energy-momentum conservation requirements. The generationrecombination processes are analyzed for the case of scattering by a short-range disorder and the deformation interaction of carriers with in-plane acoustic modes. The generation-recombination rates were calculated for the cases of intrinsic and heavily-doped graphene at room temperature. The transient evolution of nonequilibrium carriers is described by the exponential fit dependent on doping conditions and disorder level. The characteristic relaxation times are estimated to be about 150 -400 ns for sample with the maximal sheet resistance ∼5 kΩ. This rate is comparable with the generation-recombination processes induced by the thermal radiation.

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“…In order to explain these results, the detailed form of carrier spectra near the band edges was obtained [2,3,11].…”

Section: Gs Band Spectrum and Defect Levels Transformation Under Uniamentioning

confidence: 99%

“…In narrow gap and gapless semiconductors (NS, and GS -the triple MCT compound) this leads to dramatic band structure transformation [1,2]. The strain induced gap ap− pears in GS and the crystal can transform either into direct band, or into indirect band one, depending on MCT com− pound composition and strain value [3].…”

Section: Introductionmentioning

confidence: 99%

Stimulated and spontaneous far infra-red emission from uniaxially strained gapless Hg1−xCdxTe

Gasan-Zade

Стріха

Shepelskii

2010

Opto-Electronics Review

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The intensive far infra-red irradiation in the range of 80–100 μm was observed in uniaxially strained gapless p-Hg1−xCdxTe (MCT) with x = 0.14 in the strong electric field. The inverse occupation in strained MCT is created because the hot electrons distribution occurs in the c-band under impact ionization, while the holes are localized near the v-band top. The probability of band-to-band radiative transition increases dramatically when the acceptor level becomes resonance in the v-band. At threshold values of strain and electric field (P = 2.5–2.7 kbar, E = 50–55 V/cm), increase in irradiation (by 3 orders of magnitude) and increase in current (by 4–6 times) occur.

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Narrow‐Gap and Gapless Semiconductors under Uniaxial Stress. Energy Spectrum and Galvanomagnetic Phenomena

Cited by 33 publications

References 53 publications

Surface states of strained thin films of the Dirac semimetal Cd3As2

Surface states of strained thin films of the Dirac semimetal Cd3As2

Generation and recombination processes via acoustic phonons in disordered graphene

Stimulated and spontaneous far infra-red emission from uniaxially strained gapless Hg1−xCdxTe

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