Narrow gap nano-dots growth by droplets heteroepitaxial mode

Shusterman, S.; Raizman, A.; Paltiel, Yossi

doi:10.1016/j.infrared.2009.05.004

Cited by 4 publications

(4 citation statements)

References 30 publications

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“…10,11 A more recent technique for QD fabrication, the droplet heteroepitaxy ͑DHE͒ method, 12,13 has no such limitations. It has been demonstrated 14 that the DHE method is more relaxed in the combination of materials that can be used, allowing great flexibility in realizing high density QDs grown on almost any substrate. This method consists of two basic steps: first, for III-V QDs, nanodroplets of the group III element are formed on the substrate.…”

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confidence: 99%

“…Previous work has demonstrated that the DHE dot growth is very sensitive to the process parameters. 12,15 The mechanisms taking part in the QD formation are quite complex 14 and are not yet fully understood. Strong material intermixing, 16 strain, and dislocations 17 have all been observed.…”

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confidence: 99%

“…The lower temperature allowed us to obtain smaller, denser dots. 14 ͑Color online͒ EDY profiles along ͑001͒ lines going through the center positions of ͑a͒ group III ͑Ga͒ and ͑b͒ group V ͑As͒ atoms in the substrate. The lines corresponding to smaller peaks in ͑a͒ and larger peaks in ͑b͒ were measured at the Ga K-edge x-ray energy, while the larger peaks in ͑a͒ and smaller peaks in ͑b͒ correspond to the As K-edge x-ray energy.…”

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confidence: 99%

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Structure of droplet-epitaxy-grown InAs/GaAs quantum dots

Cohen

Yochelis

Westreich

et al. 2011

Applied Physics Letters

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We have used a direct x-ray phasing method, coherent Bragg rod analysis, to obtain sub-angstrom resolution electron density maps of the InAs/GaAs dot system. The dots were grown by the droplet heteroepitaxy ͑DHE͒ technique and their structural and compositional properties are compared with those of dots grown by the strain-driven Stranski-Krastanov method. Our results show that the Ga diffusion into the DHE-grown dots is somewhat larger; however, other characteristics such as the composition of the dots' uppermost layers, the interlayer spacing, and the bowing of the atomic layers are similar.

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Structure of droplet-epitaxy-grown InAs/GaAs quantum dots

Cohen

Yochelis

Westreich

et al. 2011

Applied Physics Letters

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“…A variety of highly crystalline and high density nanostructures, grown on various substrates have already been demonstrated using the DHE method. These include combinations of GaAs, GaN, InGaAs, InAs, InSb, InAsSb and GaSb [ 17 – 21 ] Interestingly enough, in some of those systems, the dots were realized with practically no substrate-dot lattice mismatch [ 17 , 21 ]. Complex shape control has also been achieved by the droplet method [ 22 ].…”

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confidence: 99%

Surface X-Ray Diffraction Results on the III-V Droplet Heteroepitaxy Growth Process for Quantum Dots: Recent Understanding and Open Questions

Cohen

Elfassy

Koplovitz

et al. 2011

Sensors

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In recent years, epitaxial growth of self-assembled quantum dots has offered a way to incorporate new properties into existing solid state devices. Although the droplet heteroepitaxy method is relatively complex, it is quite relaxed with respect to the material combinations that can be used. This offers great flexibility in the systems that can be achieved. In this paper we review the structure and composition of a number of quantum dot systems grown by the droplet heteroepitaxy method, emphasizing the insights that these experiments provide with respect to the growth process. Detailed structural and composition information has been obtained using surface X-ray diffraction analyzed by the COBRA phase retrieval method. A number of interesting phenomena have been observed: penetration of the dots into the substrate (“nano-drilling”) is often encountered; interdiffusion and intermixing already start when the group III droplets are deposited, and structure and composition may be very different from the one initially intended.

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