Narrow Gap Semiconductors

Harman, T. C.; Melngailis, I.

doi:10.1016/b978-0-12-002904-4.50008-5

Cited by 76 publications

(23 citation statements)

References 168 publications

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“…In the review paper published in 1974 [59] Several years later, this opinion was completely chan− ged. In the late 1970s the development of IV−VI alloy photodiodes was discontinued because the chalcogenides suffered two significant drawbacks.…”

Section: Post-war Activitymentioning

confidence: 99%

“…The diffi− culties in growing HgCdTe material, significantly due to the high vapour pressure of Hg, encouraged the development of alternative detector technologies over the past forty years. One of these was PbSnTe, which was vigorously pursued in parallel with HgCdTe in the late 60s, and early 70s [58,59]. PbSnTe was comparatively easy to grow and good quality LWIR photodiodes and lasers were readily demonstrated.…”

Section: Post-war Activitymentioning

confidence: 99%

“…One of these was PbSnTe, mentioned previously [58,59]. InAs/Ga 1-x In x Sb strained layer superlattices (SLSs) have been also proposed for IR detector applications in the 8-14−μm region [72].…”

Section: Alternative Materials Systemsmentioning

confidence: 99%

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History of infrared detectors

Rogalski

2012

Opto-Electronics Review

425

207

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This paper overviews the history of infrared detector materials starting with Herschel’s experiment with thermometer on February 11th, 1800. Infrared detectors are in general used to detect, image, and measure patterns of the thermal heat radiation which all objects emit. At the beginning, their development was connected with thermal detectors, such as thermocouples and bolometers, which are still used today and which are generally sensitive to all infrared wavelengths and operate at room temperature. The second kind of detectors, called the photon detectors, was mainly developed during the 20th Century to improve sensitivity and response time. These detectors have been extensively developed since the 1940’s. Lead sulphide (PbS) was the first practical IR detector with sensitivity to infrared wavelengths up to ∼3 μm. After World War II infrared detector technology development was and continues to be primarily driven by military applications. Discovery of variable band gap HgCdTe ternary alloy by Lawson and co-workers in 1959 opened a new area in IR detector technology and has provided an unprecedented degree of freedom in infrared detector design. Many of these advances were transferred to IR astronomy from Departments of Defence research. Later on civilian applications of infrared technology are frequently called “dual-use technology applications.” One should point out the growing utilisation of IR technologies in the civilian sphere based on the use of new materials and technologies, as well as the noticeable price decrease in these high cost technologies. In the last four decades different types of detectors are combined with electronic readouts to make detector focal plane arrays (FPAs). Development in FPA technology has revolutionized infrared imaging. Progress in integrated circuit design and fabrication techniques has resulted in continued rapid growth in the size and performance of these solid state arrays.

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Section: Post-war Activitymentioning

confidence: 99%

Section: Post-war Activitymentioning

confidence: 99%

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History of infrared detectors

Rogalski

2012

Opto-Electronics Review

425

207

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“…Structural studies of PbSe have reported the rock salt crystal structure at ambient temperature and pressure with a lattice pa-rameter of a = 6.13Å and a direct minimum energy band gap of around 0.28 eV at the L point in the Brillouin zone. 3,11,12 In contrast, SnSe has been stabilized as an orthorhombic crystal with layered symmetry and an indirect minimum energy band gap of 0.9 eV. 3,13 On the basis of X-ray diffraction studies of annealed powders, it has been established 14,15 that the mixed alloy Pb 1−x Sn x Se stabilizes in the rock salt structure for 0 ≤ x ≤ 0.43 and that the minimum band gap remains at the L point.…”

Section: Introductionmentioning

confidence: 99%

Temperature-driven band inversion inPb0.77Sn0.23Se: Optical and Hall effect studies

et al. 2014

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Optical and Hall-effect measurements have been performed on single crystals of Pb0.77Sn0.23Se, a IV-VI mixed chalcogenide. The temperature dependent (10-300 K) reflectance was measured over 40-7000 cm −1 (5-870 meV) with an extension to 15,500 cm −1 (1.92 eV) at room temperature. The reflectance was fit to the Drude-Lorentz model using a single Drude component and several Lorentz oscillators. The optical properties at the measured temperatures were estimated via KramersKronig analysis as well as by a Drude-Lorentz fit. The carriers were p-type with the carrier density determined by Hall measurements. A signature of valence intraband transition is found in the lowenergy optical spectra. It is found that the valence-conduction band transition energy as well as the free-carrier effective mass reach minimum values at 100 K, suggesting temperature-driven band inversion in the material. Density functional theory calculation for the electronic band structure are also presented.

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“…The perceived requirement for detection in LWIR band led to development of narrow-gap ternary alloy systems such as InAsSb, PbSnTe, and HgCdTe. [8][9][10] For 10 years during the late 1960s to the mid-1970s, HgCdTe alloy detectors were in serious competition with IV-VI alloy devices (mainly PbSnTe) for developing photodiodes because of the latter's production and storage problems. 9 However, development of PbSnTe photodiodes was discontinued because the chalcogenides suffered from two significant drawbacks: very high thermal coefficient of expansion (a factor of 7 higher than Si) and short Shockley-Read-Hall (SRH) carrier lifetime.…”

Section: Introductionmentioning

confidence: 99%