2017
DOI: 10.1007/s00340-017-6777-9
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Narrow-line external cavity diode laser micro-packaging in the NIR and MIR spectral range

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Cited by 12 publications
(10 citation statements)
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“…Narrow linewidth lasers are crucial for applications including coherent optical communication systems and microwave photonics. Their linewidth is normally reduced via extending photon life time using external cavity or by locking the laser to a stable reference with advanced electronics [46], [47]. Both these approaches unavoidably add cost that is at odds with the need for low cost narrow linewidth lasers, creating a long-lasting dilemma in practical system applications.…”
Section: Features Of Optical Injection Locking a Linewidth Redumentioning
confidence: 99%
“…Narrow linewidth lasers are crucial for applications including coherent optical communication systems and microwave photonics. Their linewidth is normally reduced via extending photon life time using external cavity or by locking the laser to a stable reference with advanced electronics [46], [47]. Both these approaches unavoidably add cost that is at odds with the need for low cost narrow linewidth lasers, creating a long-lasting dilemma in practical system applications.…”
Section: Features Of Optical Injection Locking a Linewidth Redumentioning
confidence: 99%
“…This makes this solution inappropriate for long-term use in an arrangement that is ultimately expected to operate with minimal user intervention. Our long-term aim is therefore to replace the 369-nm laser with a smaller and more robust unit and, for this reason, we evaluated frequency doubling of a bespoke commercially-available 739-nm diode laser [16] providing up to 60 mW output in free space. Using an AdvR waveguide frequency doubler with a pig-tailed input and free-space output, ~24 W was produced at 369.5 nm from 15 mW in the polarization-maintaining input fiber.…”
Section: Introductionmentioning
confidence: 99%
“…Light at 399 nm for photoionisation of neutral ytterbium atoms was generated by frequency doubling of a commercial diode laser at 798 nm [16] that provided up to 80 mW in free space. The laser had an integral thermo-electric cooler in a TO-39 package that included a collimator and also a miniature volume holographic grating (VHG) for frequency control.…”
Section: Introductionmentioning
confidence: 99%
“…The lower output power and the higher threshold compared with the 2 μm DFB laser are caused by an earlier development stage where the RWG topology and surface roughness were not as ideal as in the 2 μm wafer. Also the reflectivity of the front facet coating is 30% instead of 10% for the 2 μm DFB laser [17].…”
Section: B 2128 Nm Dfb Diode Laser As Sensor Application For N 2 Omentioning
confidence: 99%
“…The laser threshold is I bias 112 mA, and the laser power can be increased with bias current to a maximum of nearly 21 mW, both at the central wavelength of 1.95 μm. The kinks in the PI curve are mode hops, which result from chip length changes with increasing laser current [17,20]. In the lower inset the optical spectrum is shown.…”
Section: λ 1950 Nm External Cavity Diode Laser As Water Vapor Sensmentioning
confidence: 99%