Narrow-line InGaN/GaN green laser diode with high-order distributed-feedback surface grating

Holguín‐Lerma, Jorge A.; Ng, Tien Khee; Ooi, Boon S.

doi:10.7567/1882-0786/ab0a57

Cited by 24 publications

(19 citation statements)

References 37 publications

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“…The DFB-LD cavity length is 605 µm. The design and fabrication of the device follow the Bragg condition and the steps described elsewhere [9]. As shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

“…While DFB-LDs are now widely available at the telecom wavelengths, they are relatively unexplored at the visible wavelengths. Device development has shown InGaN-based DFB-LDs emitting at violet, blue, and green wavelengths [6][7][8][9][10], but aside from a recent report [11], their application to optical wireless communications is little-known.…”

Section: Introductionmentioning

confidence: 99%

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10-Gbit/s Sky-Blue Distributed Feedback Laser Diode-Based Visible Light Communication

Kong

Holguín‐Lerma

Alkhazragi

et al. 2020

Optical Fiber Communication Conference (OFC) 2020

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“…The DFB-LD cavity length is 605 µm. The design and fabrication of the device follow the Bragg condition and the steps described elsewhere [9]. As shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

10-Gbit/s Sky-Blue Distributed Feedback Laser Diode-Based Visible Light Communication

Kong

Holguín‐Lerma

Alkhazragi

et al. 2020

Optical Fiber Communication Conference (OFC) 2020

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“…In a bid to address this shortcoming, two techniques have been widely explored in the literature to realize narrowband emission devices. Firstly, the monolithic approach employing grating structures in the form of distributed feedback (DFB) [9], [10], [11] and very recently, surface and sidewall DFB [12] gratings. These schemes demonstrated narrowband emission and are generally incorporated during the laser diode growth/fabrication process.…”

Section: Introductionmentioning

confidence: 99%

“…These schemes demonstrated narrowband emission and are generally incorporated during the laser diode growth/fabrication process. Moreover, the realization of monolithic tunable laser with multi-section InGaN/GaN devices via altering selected section characteristics [9], [13] has also been reported in the green-blue region. However, monolithic integration of DFB gratings, as well as multi-section device fabrication on GaN, is still in the initial stage due to its sophisticated fabrication techniques and complexity, thus adding to increased device cost.…”

Section: Introductionmentioning

confidence: 99%

Blue Laser Diode System With an Enhanced Wavelength Tuning Range

et al. 2020

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A prism-based self-injection locked seamlessly tunable blue InGaN/GaN laser diode composite cavity system is presented. A rigorous analysis of this external cavity diode laser (ECDL) system is performed at two different optical feedback powers. At 130 mA low injection, the high reflection system (HRS) exhibits a record wideband tuning span of ∼12.11 nm with a side-mode-suppression-ratio (SMSR) ≥ 15 dB, measuring as high as 40 dB, linewidth ≤110 pm, and a working power of about 3 mW. Whereas, a tuning range of 8 nm with linewidth ≤88 pm, SMSR ≥ 13 dB, reaching a maximum of 35 dB with 14.5 mW usable power is achieved from the low reflection system (LRS) at the same injection current. Moreover, an inverse relationship between the optical power and the tunability is observed in both the systems with a value as high as 180 mW exhibited by LRS configuration and attaining a tunability of 4.5 nm. Both systems highlight high stability even at higher injection currents and temperature. Such a robust, simple, and compact system may serve as a crucial light source in a plethora of diverse applications besides visible optical communications. To the best of our knowledge, this is the first report on a continuously tunable self-injection locked tunable laser system.

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“…GaN-based DFB LDs have been achieved by buried gratings [7,8,9], sidewall gratings, and surface gratings [10,11,12,13]. In the beginning, the first order DFB LD was achieved by establishing the buried gratings [14].…”

Section: Introductionmentioning

confidence: 99%

InGaN/GaN Distributed Feedback Laser Diodes with Surface Gratings and Sidewall Gratings

Deng

Liao

et al. 2019

Micromachines

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A variety of potential applications such as visible light communications require laser sources with a narrow linewidth and a single wavelength emission in the blue light region. The gallium nitride (GaN)-based distributed feedback laser diode (DFB-LD) is a promising light source that meets these requirements. Here, we present GaN DFB-LDs that share growth and fabrication processes and have surface gratings and sidewall gratings on the same epitaxial substrate, which makes LDs with different structures comparable. By electrical pulse pumping, single-peak emissions at 398.5 and 399.95 nm with a full width at half maximum (FWHM) of 0.32 and 0.23 nm were achieved, respectively. The surface and sidewall gratings were fabricated alongside the p-contact metal stripe by electrical beam lithography and inductively coupled plasma etching. DFB LDs with 2.5 μm ridge width exhibit a smaller FWHM than those with 5 and 10 μm ridge widths, indicating that the narrow ridge width is favorable for the narrowing of the line width of the DFB LD. The slope efficiency of the DFB LD with sidewall gratings is higher than that of surface grating DFB LDs with the same ridge width and period of gratings. Our experiment may provide a reliable and simple approach for optimizing gratings and GaN DFB-LDs.

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Narrow-line InGaN/GaN green laser diode with high-order distributed-feedback surface grating

Cited by 24 publications

References 37 publications

10-Gbit/s Sky-Blue Distributed Feedback Laser Diode-Based Visible Light Communication

10-Gbit/s Sky-Blue Distributed Feedback Laser Diode-Based Visible Light Communication

Blue Laser Diode System With an Enhanced Wavelength Tuning Range

InGaN/GaN Distributed Feedback Laser Diodes with Surface Gratings and Sidewall Gratings

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