Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III–V Semiconductor Lasers

Wang, Huolei; Kim, Dong-Wan; Harfouche, Mark; Santis, Christos T.; Satyan, Naresh; Rakuljic, George; Yariv, Amnon

doi:10.1109/lpt.2017.2771222

Cited by 16 publications

(15 citation statements)

References 24 publications

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“…For example, the low/negative linewidth enhancement factor available with the quantum dot material could significantly reduce the modulation chirp and provide symmetric locking region [45]. New laser designs involving silicon photonics have demonstrated new features such as an extended photon lifetime for significant reduction of the intrinsic laser linewidth [127]. OIL features of these new lasers are yet to be studied.…”

Section: Future Research Directionsmentioning

confidence: 99%

Optical Injection Locking: From Principle to Applications

Liu

Slavı́k

2020

J. Lightwave Technol.

152

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This paper reviews optical injection locking (OIL) of semiconductor lasers and its application in optical communications and signal processing. Despite complex OIL dynamics, we attempt to explain the operational principle and main features of the OIL in an intuitive way, aiming at a wide understanding of the OIL and its associated techniques in the optic and photonic communities. We review and compare different control techniques that enable robust OIL in practical systems. The applications are reviewed with a focus on new developments in the past decade, under the categories of 'High Speed Directly Modulated Lasers' and 'Optical Carrier Recovery'. Finally, we draw our vision for future research directions.

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Section: Future Research Directionsmentioning

confidence: 99%

Optical Injection Locking: From Principle to Applications

Liu

Slavı́k

2020

J. Lightwave Technol.

152

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“…The unpatterned InP is directly bonded on the pattered SOI resonators and incorporates five InGaAsP quantum-wells. Subsequently, the mesa structure and the metal contacts are patterned on the III–V wafer 23 . Figure 2 c shows the SEM image of the fabricated laser.…”

Section: Resultsmentioning

confidence: 99%

Consequences of quantum noise control for the relaxation resonance frequency and phase noise in heterogeneous Silicon/III–V lasers

Kim

Harfouche

Wang

et al. 2022

Sci Rep

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We have recently introduced a new semiconductor laser design which is based on an extreme, 99%, reduction of the laser mode absorption losses. In previous reports, we showed that this was achieved by a laser mode design which confines the great majority of the modal energy (> 99%) in a low-loss Silicon guiding layer rather than in highly-doped, thus lossy, III–V p$${}^+$$ + and n$${}^+$$ + layers, which is the case with traditional III–V lasers. The resulting reduced electron-field interaction was shown to lead to a commensurate reduction of the spontaneous emission rate by the excited conduction band electrons into the laser mode and thus to a reduction of the frequency noise spectral density of the laser field often characterized by the Schawlow–Townes linewidth. In this paper, we demonstrate theoretically and present experimental evidence of yet another major beneficial consequence of the new laser design: a near total elimination of the contribution of amplitude-phase coupling (the Henry $$\alpha $$ α parameter) to the frequency noise at “high” frequencies. This is due to an order of magnitude lowering of the relaxation resonance frequency of the laser. Here, we show that the practical elimination of this coupling enables yet another order of magnitude reduction of the frequency noise at high frequencies, resulting in a quantum-limited frequency noise spectral density of 130 Hz$$^2$$ 2 /Hz (linewidth of 0.4 kHz) for frequencies beyond the relaxation resonance frequency 680 MHz. This development is of key importance in the development of semiconductor lasers with higher coherence, particularly in the context of integrated photonics with a small laser footprint without requiring any sort of external cavity.

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“…The unpatterned InP is directly bonded on the pattered SOI resonators and incorporates five InGaAsP quantum-wells. Subsequently, the mesa structure and the metal contacts are patterned on the III-V wafer 22 . Figure 2 (c) shows the SEM image of the fabricated laser.…”

Section: Laser Design and Fabricationmentioning

confidence: 99%

Consequences of Quantum Noise Control for the Relaxation Resonance Frequency and Phase Noise in Heterogeneous Silicon/III-V Lasers

Kim

Harfouche

Wang

et al. 2021

Preprint

Self Cite

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We have recently introduced a new semiconductor laser design which is based on an extreme, 99%, reduction of the laser mode absorption losses. This was achieved by a laser mode design which confines the great majority of the modal energy (> 99%) in a low-loss Silicon guiding layer rather than in highly-doped, thus lossy, III-V p+ and n+ layers, which is the case with traditional III-V lasers. The resulting reduced electron-field interaction leads directly to a commensurate reduction of the spontaneous emission rate by the excited conduction band electrons into the laser mode and thus to a reduction of the frequency noise spectral density of the laser field often characterized by the Schawlow-Townes linewidth. In this paper, we demonstrate theoretically and present experimental evidence of yet another major beneficial consequence of the new laser design: a near total elimination of the contribution of amplitude-phase coupling (the Henry α parameter) to the frequency noise at “high” frequencies. This is due to an order of magnitude lowering of the relaxation resonance frequency of the laser. The practical elimination of this coupling enables yet another order of magnitude reduction of the frequency noise at high frequencies, resulting in a quantum-limited frequency noise spectral density of 130 Hz2/Hz (linewidth of 0.4 kHz) for frequencies beyond 680 MHz. This development is of key importance in the drive to semiconductor lasers with higher coherence, particularly in the context of integrated photonics with a small laser footprint.

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Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III–V Semiconductor Lasers

Cited by 16 publications

References 24 publications

Optical Injection Locking: From Principle to Applications

Optical Injection Locking: From Principle to Applications

Consequences of quantum noise control for the relaxation resonance frequency and phase noise in heterogeneous Silicon/III–V lasers

Consequences of Quantum Noise Control for the Relaxation Resonance Frequency and Phase Noise in Heterogeneous Silicon/III-V Lasers

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