Narrow linewidth tunable semiconductor laser

Matsui, Yasuhiro; Eriksson, Urban; Wesstrom, J.-O.; Liu, Yitong; Hammerfeldt, S.; Hassler, Martin; Stoltz, B.; Carlsson, N.; Siraj, Salehe; Goobar, E.

doi:10.1109/iciprm.2016.7528538

Cited by 7 publications

(4 citation statements)

References 7 publications

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“…During these developments, many integrated and hybrid solutions emerged [41][42][43]; nonetheless, the majority were bulky, expensive, and typically non-replicable, making these approaches unfeasible to be integrated into further complex systems and subsystems. For instance, devices such as optical amplifiers [44], lasers [16,45], and modulators [46], are not supplied by the different integrated platforms due to limitations of semiconductor integration technology. Thus, it restricted the investment of the different labs and research institutes in the development of their concepts/testing to validate their contributions/solutions while waiting for the necessary developments of the technology.…”

Section: Pic Evolutionmentioning

confidence: 99%

Photonic Integrated Circuits for NGPON2 ONU Transceivers (Invited)

et al. 2020

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The development of photonic integrated circuits (PIC) for access network applications, such as passive optical networks (PON), constitutes a very attractive ecosystem due to PON’s potential mass market. The implementation of PIC solutions in this context is expected to facilitate the possibility of increasing the complexity and functionalities of devices at a potentially lower cost. We present a review addressing the prominent access network market requirements and the main restrictions stemming from its specific field of application. Higher focus is given to PON devices for the optical network unit (ONU) and the implications of designing a device ready for market by discussing its various perspectives in terms of technology and cost. The discussed PIC solutions/approaches in this paper are mainly based on indium phosphide (InP) technology, due to its monolithic integration capabilities. A comprehensive set of guidelines considering the current technology limitations, benefits, and processes are presented. Additionally, key current approaches and efforts are analyzed for PON next generations, such as next-generation PON 2 (NGPON2) and high-speed PON (HSP).

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Section: Pic Evolutionmentioning

confidence: 99%

Photonic Integrated Circuits for NGPON2 ONU Transceivers (Invited)

et al. 2020

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“…With the development of ultrahigh-speed optical interconnection, coherent optical communication [1][2][3], and coherent detection technology [4][5][6][7], more urgent requirements are put forward for the narrow linewidth, high power, and high stability of laser source. However, limited to the length of cavity, the spectral linewidth conventional distributed feedback (DFB) lasers and distributed bragg reflector (DBR) lasers are typically in the order of~MHz, along with a small tuning range around a few nm [8,9].…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, hybrid integration between photonics chips and semiconductor lasers provides an ideal method to fabricated ECLs. These hybrid integration ECLs have been investigated based on different materials, such as III-V [3], silicon [10][11][12], silica [6], SiN [13], and polymers [14][15][16]. Compared with other materials, silica planar lightwave circuits (PLCs) are attractive for ECLs owing to its high mechanical strength, high thermal stability, low loss, and almost the same core geometry with fiber cores, which is suitable for an optical communication system.…”

Section: Introductionmentioning

confidence: 99%

High-Q-Factor Silica-Based Racetrack Microring Resonators

Yin

Zhang

et al. 2021

Photonics

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In this paper, ultrahigh-Q factor racetrack microring resonators (MRRs) are demonstrated based on silica planar lightwave circuits (PLCs) platform. A loaded ultrahigh-Q factor Qload of 1.83 × 106 is obtained. The MRRs are packaged with fiber-to-fiber loss of ~5 dB. A notch depth of 3 dB and ~137 pm FSR are observed. These MRRs show great potential in optical communications as filters. Moreover, the devices are suitable used in monolithic integration and hybrid integration with other devices, especially in external cavity lasers (ECLs) to realize ultranarrow linewidths.

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“…Different integration strategies have been followed to achieve this goal. In [15][16][17][18] for example, monolithically integrated tuneable distributed Bragg reflector (DBR) lasers with 50 -100 kHz intrinsic linewidth were demonstrated. The mirrors were sampled and super-mode DBR gratings that were thermally tuned.…”

Section: Introductionmentioning

confidence: 99%

Electro-Optic Tuning of a Monolithically Integrated Widely Tuneable InP Laser With Free-Running and Stabilized Operation

Andreou

Williams

Bente

2020

J. Lightwave Technol.

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Narrow linewidth tunable semiconductor laser

Cited by 7 publications

References 7 publications

Photonic Integrated Circuits for NGPON2 ONU Transceivers (Invited)

Photonic Integrated Circuits for NGPON2 ONU Transceivers (Invited)

High-Q-Factor Silica-Based Racetrack Microring Resonators

Electro-Optic Tuning of a Monolithically Integrated Widely Tuneable InP Laser With Free-Running and Stabilized Operation

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