1999
DOI: 10.1109/77.783894
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Narrow long Josephson junctions

Abstract: Long Josephson junctions of width down to less than 0.3 pm are fabricated using electron beam lithography. The junctions are made in niobiumaluminum-oxide trilayer technology using cross-linked PMMA for insulation. We measured the fluxon penetration field, the magnetic field period of the critical current modulation, and the Fiske step voltages of the junctions. A strong dependence of these quantities on the junction width is observed. Assuming a general-type relation between the spatial derivative of the phas… Show more

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Cited by 17 publications
(28 citation statements)
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“…1(a) and 1(b)). For experiments, we fabricated a junction of diameter d 100 m and width w 0:5 m which was etched from a sputtered Nb=AlO x =Nb thin film trilayer and patterned using electron-beam lithography [18]. Its critical current density is 220 A=cm 2 , the Josephson length is J 30 m, and the normalized junction length is L d= J 10:5.…”
mentioning
confidence: 99%
“…1(a) and 1(b)). For experiments, we fabricated a junction of diameter d 100 m and width w 0:5 m which was etched from a sputtered Nb=AlO x =Nb thin film trilayer and patterned using electron-beam lithography [18]. Its critical current density is 220 A=cm 2 , the Josephson length is J 30 m, and the normalized junction length is L d= J 10:5.…”
mentioning
confidence: 99%
“…The junction area was defined in a sputtered Nb/AlO x /Nb trilayer by using electron-beam lithography and reactive ion etching. For insulation of the trilayer edges we used highly cross-linked PMMA [15]. The critical current density of the trilayer is about 220 A/cm 2 .…”
mentioning
confidence: 99%
“…1.1c. The junction of diameter d = 100 µm and width w = 0.5 µm is etched from a sputtered Nb/AlO x /Nb thin film trilayer which is patterned using electron-beam lithography [29]. A photograph of the sample taken using an optical microscope is shown in Fig.…”
Section: Quantum Tunnellingmentioning
confidence: 99%
“…1.4a-b). For experiments we fabricated a junction of diameter d = 100 µm and width w = 0.5 µm which was etched from a sputtered Nb/AlO x /Nb thin film trilayer and patterned using electron-beam lithography [29]. Its critical current density is 220 A/cm 2 , the Josephson length is λ J ≈ 30 µm and the normalized junction length is L ≡ πd/λ J ≈ 10.5.…”
Section: Thermal and Quantum Dissociationmentioning
confidence: 99%