Narrow pulse measurement of drain characteristics of GaAs MESFETs

Trapping effects in GaN and SiC microwave FETs

“…This prevented device and circuit designers from obtaining accurate device information to use in small-and large-signal models. The use of pulsed current-voltage ( -) test systems [16], which pulsed both gate and drain voltage with submicrosecond pulsewidths, yielded the drain characteristics that more accurately represented the device characteristics under high-frequency conditions, especially for those systems for which an arbitrary quiescent bias could be set [17]. It was demonstrated that device performance could be accurately predicted by using the pulsed -characteristics in smalland large-signal models [17].…”

Output properties of HEMT of nanocrystalline/crystalline Si heterojunctions

“…Moreover, as given in Fig. 2 the breakdown voltage V DS reaches at around 17 V, which shows notable difference from the experimental observation of about 10 V in MESFETs [20]. Breakdown mechanisms are affected by many factors, for example, electric fields, carrier distributions, and ionization rates.…”

Low frequency parasitic effects in RF transistors and their impact on power amplifier performances

“…Parasitic effects in AlGaN/GaN HEMTs have been extensively studied both from the point of view of thermal effects and trapping effects. Many effects have been identified through the use of electrical methods such as Deep Level Transient Spectroscopy(DLTS) [1] or pulsed measurements initially on GaAs FETs [2] then on GaN devices [3]. Meanwhile a number of authors have conducted a number of studies about the physical mechanisms involved in the trapping process [4][5][6].…”