Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors

Zogg, H.; Arnold, Martin

doi:10.2478/s11772-006-0005-1

Cited by 6 publications

(1 citation statement)

References 12 publications

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“…Chalcogenide glasses are well known for their unique optical properties and versatile photoinduced phenomena [1][2][3][4], which makes them popular candidates for many optical applications. A number of amorphous chalcogenide materials, including As 2 S 3 , have excellent infrared transmission, high refractive index and nonlinearity, which are essential for IR detection and fabricating IR optical components [5][6][7][8][9]. Upon exposure or current injection, photo-electric reactions such as photocrystallization, photopolymerization, photodissolution and electromigration can take place [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Solution-processing of thick chalcogenide-chalcogenide and metal-chalcogenide structures by spin-coating and multilayer lamination

Zha¹,

Arnold²

2013

Opt. Mater. Express

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This paper presents a new technique for fabricating thick (>10µm) chalcogenide multilayer structures. Films of arbitrary thicknesses are readily achieved through spin-coating, lamination and baking. For homogeneous systems, layer interfaces can be effectively removed by annealing above T g. Alternatively, heterogeneous multilayer films can be realized by introducing layers of different chalcogenide materials or metals. In particular, photo-induced Ag dissolution is verified in a laminated multilayer film, with a refractive index increase greater than 0.2. The work presented here has great implications for chalcogenide deposition with potential applications in data storage, IR detection and IR beam combining.

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Section: Introductionmentioning

confidence: 99%

Solution-processing of thick chalcogenide-chalcogenide and metal-chalcogenide structures by spin-coating and multilayer lamination

Zha¹,

Arnold²

2013

Opt. Mater. Express

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Unveiling the effects of doping small nickel clusters with a sulfur impurity

et al. 2018

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Small free-standing Ni clusters have been widely investigated during the last decade, but not many of their derived chalcogenides, despite their interest in technology and the new prospects that the nanoscale may open. The present work uncovers the effects of the S-doping on the structural, electronic and magnetic properties of Nin, n=1-10 clusters. Density functional theoretic calculations within the generalized gradient approximation for the exchange and correlation were conducted to explore the structural, electronic, and magnetic properties of the resulting NinS chalcogenide nanoparticles. The sulfur impurity is always adsorbed on the 3-fold holow sites available on the nickel host, in qualitative agreement with recent results of S adsorption on Ni(111) surfaces. S-doping tends to enlarge the average Ni-Ni inter-atomic distance but enhaces the thermodinamical stability of Ni clusters. It also increases the vertical ionization energy and electron affinity. However, S-doping has a small effect on the magnetism of small Ni clusters. According to the spin-dependent HOMO-LUMO gap, most of these clusters are good candidates as molecular junctions for spin filtering at low bias voltage.

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Quantum chemical studies on the structural and electronic properties of nickel sulphide and iron sulphide nanoclusters

et al. 2014

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Nanoclusters of nickel sulphide (NiS) n and iron sulphide (FeS) n for n = 3-5 are studied using B3LYP exchange correlation function with 6-31G as a basis set. The structural stability of different isomers of NiS and FeS is analysed with the optimized energy, binding energy and vibrational studies. The electronic properties of isomers are discussed in terms of HOMO-LUMO gap, ionization potential, electron affinity, and embedding energy of different clusters. Based on the calculated energy, planar ring, linear ladder and bipyramidal cube of NiS and FeS nanoclusters are found to be more stable. The increase in number of atoms in the clusters leads to increase in its stability. The dipole moment is high for planar rhombus and linear ladder structures of NiS and FeS nanoclusters. The ionization potential and electron affinity are high for planar ring structure of NiS and FeS clusters. The value of energy gap of linear ladder NiS nanocluster and cube and bipyramidal cube structures of FeS is found to be low. The binding energy for cube structure of NiS and FeS clusters is found to be high. Hexagonal ring structure of NiS and FeS clusters has low embedding energy value. The other parameters such as dipole moment and point symmetry are also discussed. The structural stability and electronic properties will provide an insight for experimentalist to tailor new materials that have potential importance in engineering applications.

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Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors

Cited by 6 publications

References 12 publications

Solution-processing of thick chalcogenide-chalcogenide and metal-chalcogenide structures by spin-coating and multilayer lamination

Solution-processing of thick chalcogenide-chalcogenide and metal-chalcogenide structures by spin-coating and multilayer lamination

Unveiling the effects of doping small nickel clusters with a sulfur impurity

Quantum chemical studies on the structural and electronic properties of nickel sulphide and iron sulphide nanoclusters

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