Narrowband photoresponse of a self-powered CuI/SrTiO₃ purple light detector with an ultraviolet-shielding effect

Abstract

The CuI/SrTiO3 photodetector presents excellent self-powered characteristics and shows a narrowband photoresponse at zero bias. This device shows a transparency of 70% over the visible light region and blocks 99.9% UV light.

CuI/BaSnO3 Quantum Dot/ZnSnO3 Perovskite-based Transparent p–n Junction for Photovoltaic Enhancement

“…29−34 The synergistic effects of appropriate Fermi level, high QY of homologous perovskite BaSnO 3 QD, and p-type carrier induced by Cu vacancies enable the achievement of a favorable kinetic equilibrium for high PCE. 4,[28][29][30]56 Therefore, by modifying with the dual-functional homologous perovskite BaSnO 3 QD, the CuI/BaSnO 3 QD/ZnSnO 3 obtains a decent balance between PCE and transparency. [29][30][31][32][33]62 Additionally, the excellent physical−chemical stability of inorganic perovskite BaSnO 3 QD and ZnSnO 3 contributes to the overall stability.…”

“…The bandgaps were 3.000 (CuI), 3.786 (BaSnO 3 QD), and 3.961 eV (ZnSnO 3 ) (Figure b). Therefore, the transparency of the fabricated device primarily depended on CuI with a narrower bandgap at ∼410 nm. ,− , The introduction of BaSnO 3 QD slightly reduces transparency but helps in achieving a balance between solar efficiency, carrier injection, and potential transitions. , Notably, the slight decrease in transparency resulted in a photovoltaic enhancement of 10 3 magnitudes, indicating that the regulation of carrier behavior in perovskite BaSnO 3 QD plays a crucial role in improving performance beyond simple absorption enhancement.…”

“…The obtained perovskite ZnSnO 3 film exhibited only a weak peak at 26.48° corresponding to the (012) plane (Figure ) (PDF#00-028-1486). , Interestingly, this peak was observed in all formed p–n junctions, indicating the good stability of the perovskite ZnSnO 3 film during continuous sputtering and iodization. Owing to the smaller thickness and grain size of the perovskite ZnSnO 3 film, the diffraction peaks of ZnSnO 3 were lower in intensity than CuI, which was further characterized using high-resolution transmission electron microscopy (TEM). , The CuI/ZnSnO 3 p–n junction exhibited a series of peaks at 25.23, 29.19, 42.02, 49.66, 61.05, 67.24, and 76.88° corresponding to the (111), (200), (220), (311), (400), (331), and (422) planes of CuI (PDF#04-007-2948). − While the single-perovskite BaSnO 3 QDs displayed peaks at 31.03, 44.34, 54.97, 64.33, and 72.83°, corresponding to the (110), (200), (211), (220), and (221) planes (PDF#97-067-0659), − these peaks were hardly observed in the CuI/ZnSnO 3 p–n junctions owing to their low concentration. Notably, the absence of other peaks indicates the complete decomposition of the polymer precursor and the thorough removal of iodine powder.…”

“…narrow-band light response while maintaining better visible light transparency. 28 Compared to other reported p-type semiconductors, Cu + -based CuI has attracted considerable attention due to its higher intrinsic photo-generated electron induction/transportation and adjustable potential structure. 29,30 For instance, Sharma et al reported that CuI acts as a suitable inorganic hole-transport layer (HTL) in perovskite cells, offering advantages over Cu 2 O because of its high mobility and suitable broad bandgap.…”

“…Notably, the selection of suitable p-type semiconductors is crucial for transparent photovoltaic devices. , In addition to the proper bandgap and stability required for the matched potential structure of p–n junctions and carrier transition, appropriate p-type semiconductors are of utmost importance. For instance, Zhang et al fabricated a p-CuI/n-SrTiO 3 junction self-powered photodetector that exhibited good narrow-band light response while maintaining better visible light transparency . Compared to other reported p-type semiconductors, Cu + -based CuI has attracted considerable attention due to its higher intrinsic photo-generated electron induction/transportation and adjustable potential structure. , For instance, Sharma et al reported that CuI acts as a suitable inorganic hole-transport layer (HTL) in perovskite cells, offering advantages over Cu 2 O because of its high mobility and suitable broad bandgap .…”