Native Oxide Growth and Organic Impurity Removal on Si Surface with Ozone‐Injected Ultrapure Water

Ohmi, Tadahiro; Isagawa, T.; Kogure, Masahiko; Imaoka, Takashi

doi:10.1149/1.2056163

Cited by 62 publications

(30 citation statements)

References 2 publications

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“…This value is also in agreement with the typical value of 6.7 Å reported for the thickness of the native oxide formed on the surface of a bare silicon wafer exposed to room-temperature air in a clean room over a period of 7 days [22]. For the devices characterized in this work, which had received RCA treatment prior to polysilicon deposition, the extracted value of oxide thickness was lower than the typical value of 20 Å reported for the oxide thickness at heat-treated, poly/monocrystalline interfaces [23].…”

Section: Discussionsupporting

confidence: 92%

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Investigation of the mechanism of transport across the poly/monocrystalline silicon interface in polysilicon-emitter bipolar transistors based on variations in the interface treatment process

Jamasb¹

2019

Turk J Elec Eng & Comp Sci

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Electrical transport across the poly/monocrystalline silicon (poly-Si/c-Si) interface has been investigated by introducing variations in the interface treatment process affecting the thickness of the native oxide layer formed on the silicon surface. The I-V relationship characterizing the resistance associated with this interface is extracted using an improved open-collector method, which eliminates the inherent nonlinearity arising from the reverse active characteristics of the bipolar transistor. The nonohmic behavior of the interface at low electric fields is demonstrated to be consistent with direct tunneling through a rectangular barrier presented by an ultrathin interfacial oxide layer. An approximate tunnel junction model is proposed that fits the tunneling current in the low bias regime, predicting the experimentally observed increase in the low-voltage leakage current associated with ultrathin oxides. The thickness of the interfacial oxide extracted by fitting the measured data to the proposed rectangular-barrier tunnel junction model is in good agreement with reported experimental values. Finally, a relation between experimentally introduced variations in the interface treatment process and the magnitude of the resistance associated with the interface is identified, which can be quantitatively explained based on the direct tunnel junction model in terms of differences in the native oxide thickness.

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Section: Discussionsupporting

confidence: 92%

“…2kT ϵ Si ( ϵox tox ) ; using the latter expression, the oxide thickness is extracted from the slope of the The approximately 7 Å value for oxide thickness predicted by Ricco's model is also in excellent agreement with the typical value of 6.7 Å reported for the native oxide [22].…”

Section: Discussionsupporting

confidence: 63%

Investigation of the mechanism of transport across the poly/monocrystalline silicon interface in polysilicon-emitter bipolar transistors based on variations in the interface treatment process

Jamasb¹

2019

Turk J Elec Eng & Comp Sci

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“…Because of its high efficiency on the removal of organic contaminant, 26,27 ozonated water treatment is capable of effectively removing organic component from DLD in a short time at room temperature. Once the removal of organic frameworks is initiated, fluorosilicate aggregates or nanocrystals itself can be easily removed by simple DIW cleaning process.…”

Section: Resultsmentioning

confidence: 99%

Formation of Dendrite-Like Defect during PR-Mask Silicon Oxide Wet Etching Process and Its Removal Method

Song

Yoon

Lee

et al. 2013

ECS Solid State Letters

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Formation of novel dendrite-like defect (DLD) during photoresist (PR)-mask silicon oxide wet etching in semiconductor manufacturing process was observed. It was verified that this kind of defects was composed with organic and inorganic component, which was probably originated from PR residue and fluorosilicate salt produced from silicon oxide wet etching by HF, respectively. It was found that formation of DLD was inhibited by the oxygen plasma treatment on PR surface before oxide wet etching. Moreover, ozonated deionized water (O 3 /DIW) treatment on DLD in final cleaning step was revealed to be very effective in removing DLD on PR surface.

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“…23 Our model is equivalent to a linearized version of the nonlinear kinetic equations suggested by Cerofolini 16,17 for explaining the stepped behavior of the wet oxidation of silicon. 24 The structure of the paper is as follows. In section 2 we give a general formulation of the problem.…”

Section: Introductionmentioning

confidence: 99%

Temporal Logarithmic Oscillations in Self-Similar Multilayer Aggregation: Shlesinger−Hughes Renormalization with Application to the Tunnel-Assisted Wet Oxidation of Silicon

1999

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A renormalization group approach to self-similar multilayer aggregation processes is suggested on the basis of the following assumptions. 1. The aggregate is generated by a layer-by-layer process, the rate of growth of a given layer being proportional to the number of free sites in the preceding layer. 2. The process is self-similar, that is, from layer to layer the rates of growth are scaled by a subunitary positive Grossmann factor a. It is shown that this mechanism of growth leads to temporal scale invariance. For large times the total rate of the process decreases in time according to a hyperbolic law modulated by oscillations occurring on a logarithmic time scale, with a period equal to the logarithm of the reciprocal value of the scaling factor a. In the long run the time-dependence of the total mass of the aggregate is given by a logarithmic function of time also modulated by logarithmic oscillations. The model is applied to the tunnel-assisted wet oxidation of silicon. It is assumed that multiple layers of silicon oxide are generated by a mechanism that involves a tunneling process through the silicon oxide layers. In this case Grossmann's scaling factor and the period of logarithmic oscillations have simple physical interpretations: the scaling factor is the transparency of a layer of silicon oxide, and the period of logarithmic oscillations is a measure of the tunneling length. The logarithmic oscillations of the model give a theoretical description of the stepped behavior of the oxidation process observed in the experiments reported in the literature. The presented results are of interest both from the points of view of statistical physics of fractals and nonlinear chemical kinetics.

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Native Oxide Growth and Organic Impurity Removal on Si Surface with Ozone‐Injected Ultrapure Water

Cited by 62 publications

References 2 publications

Investigation of the mechanism of transport across the poly/monocrystalline silicon interface in polysilicon-emitter bipolar transistors based on variations in the interface treatment process

Investigation of the mechanism of transport across the poly/monocrystalline silicon interface in polysilicon-emitter bipolar transistors based on variations in the interface treatment process

Formation of Dendrite-Like Defect during PR-Mask Silicon Oxide Wet Etching Process and Its Removal Method

Temporal Logarithmic Oscillations in Self-Similar Multilayer Aggregation: Shlesinger−Hughes Renormalization with Application to the Tunnel-Assisted Wet Oxidation of Silicon

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